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RD48F3300L0YTQ0 PDF预览

RD48F3300L0YTQ0

更新时间: 2023-02-26 14:03:58
品牌 Logo 应用领域
恒忆 - NUMONYX /
页数 文件大小 规格书
68页 988K
描述
Memory IC,

RD48F3300L0YTQ0 数据手册

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®
Numonyx™ StrataFlash Wireless Memory  
(L18 SCSP)  
768-Mbit L18 Family with Synchronous PSRAM  
Datasheet  
Product Features  
„
Device Architecture  
„
Flash Performance  
— Flash Die Density: 128 or 256-Mbit  
— PSRAM Die Density: 32 or 64-Mbit  
— x16 Non-Mux or ADMux I/O Interface Option  
— Bottom or Top Flash Parameter  
Configuration  
Device Voltage  
— Core: VCC = 1.8 V  
— I/O: VCCQ = 1.8 V  
Device Packaging  
— Ballout: QUAD+ (88 Balls)  
— Area: 8x10 mm to 11x13 mm  
— Height: 1.2 mm to 1.4 mm  
PSRAM Performance  
— 85 ns Initial Read Access;  
25 ns Asynchronous Page-Mode Read  
— Up to 54 MHz with 14 ns Clock-to-Data  
Output Synchronous Burst-Mode Read  
— Buffered Enhanced Factory Programming  
(BEFP): 5 µs/byte (typ.)  
— Write-buffer program: 7 µs/Byte (typ.)  
Flash Architecture  
— Read-While-Write/Erase  
— Asymmetrical blocking structure  
— 8-Mbit or 16-Mbit partition sizes  
— 16-Kword parameter blocks (Top or  
Bottom); 64-Kword main blocks  
— 2-Kbit One-Time Programmable Protection  
Register  
— Zero-latency block locking  
— Absolute write protection with block lock  
using F-VPP and F-WP#  
Flash Software  
— Numonyx™ FDI, Numonyx™ PSM, and  
Numonyx™ VFM  
— Common Flash Interface  
„
„
„
„
— 70 ns Initial Read Access;  
20 ns Asynchronous Page-Mode Read  
— Up to 54 MHz with 9 ns Clock-to-Data  
Synchronous Burst-Mode Reads and Writes  
— Configurable 4-, 8-, 16- and Continuous-  
Word Burst-Length Reads and Writes  
— Partial-Array Self and Temperature-  
Compensated Refresh  
— Programmable Output Impedance  
„
„
— Basic and Extended Flash Command Set  
Quality and Reliability  
— Extended Temperature –25 °C to +85 °C  
— Minimum 100K Flash Block Erase cycles  
— 130 nm ETOX™ VIII Flash Technology  
314476-05  
November 2007  

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