生命周期: | Transferred | Reach Compliance Code: | unknown |
风险等级: | 5.65 | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | ZENER DIODE |
JESD-30 代码: | R-PDSO-F2 | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性: | UNIDIRECTIONAL | 最大功率耗散: | 1 W |
认证状态: | Not Qualified | 标称参考电压: | 30 V |
表面贴装: | YES | 技术: | ZENER |
端子形式: | FLAT | 端子位置: | DUAL |
最大电压容差: | 6.67% | 工作测试电流: | 2 mA |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
RD30HFJ180C9S | STARPOWER |
获取价格 |
C9.Half Bridge | |
RD30HUF1 | MITSUBISHI |
获取价格 |
Silicon MOSFET Power Transistor,520MHz,30W | |
RD30HUF1_06 | MITSUBISHI |
获取价格 |
Silicon MOSFET Power Transistor,520MHz,30W | |
RD30HUF1_11 | MITSUBISHI |
获取价格 |
RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W | |
RD30HVF1 | MITSUBISHI |
获取价格 |
Silicon MOSFET Power Transistor,175MHz,30W | |
RD30HVF1_10 | MITSUBISHI |
获取价格 |
Silicon MOSFET Power Transistor,175MHz,30W | |
RD30HVF1-101 | MITSUBISHI |
获取价格 |
Silicon MOSFET Power Transistor,175MHz,30W | |
RD30JB | NEC |
获取价格 |
Zener Diode, 0.4W, Silicon, Unidirectional, DO-35, | |
RD30JS | NEC |
获取价格 |
DO-34 Package Low noise, Sharp Breakdown characteristics 400 mW Zener Diode | |
RD30JS | EIC |
获取价格 |
SILICON ZENER DIODES |