Datasheet > RD30HUF1_06

RD30HUF1_06

更新时间： 2024-09-12 04:08:39

品牌	Logo	应用领域
三菱 - MITSUBISHI		晶体晶体管
页数	文件大小	规格书
7页	399K
描述
Silicon MOSFET Power Transistor,520MHz,30W

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RD30HUF1_06 数据手册

MITSUBISHI RF POWER MOS FET

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RD30HUF1

RoHS Compliance,

Silicon MOSFET Power Transistor,520MHz,30W

OUTLINE DRAWING

DESCRIPTION

RD30HUF1 is a MOS FET type transistor specifically

designed for UHF RF power amplifiers applications.

22.0+/-0.3

18.0+/-0.3

7.2+/-0.5

7.6+/-0.3

4-C1

FEATURES

High power gain:

Pout>30W, Gp>10dB @Vdd=12.5V,f=520MHz

High Efficiency: 55%typ.

R1.6

APPLICATION

2.8+/-0.3

1.Drain

2.Source

3.Gate

For output stage of high power amplifiers in UHF

band mobile radio sets.

UNIT:mm

RoHS COMPLIANT

RD30HUF1-101 is a RoHS compliant products.

RoHS compliance is indicate by the letter “G” after

the Lot Marking.

ABSOLUTE MAXIMUM RATINGS

(Tc=25 UNLESS OTHERWISE NOTED)

°C

SYMBOL

V_DSS

V_GSS

Pch

PARAMETER

Drain to source voltage

Gate to source voltage

Channel dissipation

Input power

CONDITIONS

Vgs=0V

Vds=0V

Tc=25°C

Zg=Zl=50Ω

RATINGS UNIT

+/-20

7.5

Drain current

°C

°C/W

Tch

Tstg

Rth j-c

Channel temperature

Storage temperature

Thermal resistance

175

-40 to +175

2.0

junction to case

Note 1: Above parameters are guaranteed independently.

ELECTRICAL CHARACTERISTICS (Tc=25 , UNLESS OTHERWISE NOTED)

°C

LIMITS

TYP

UNIT

SYMBOL

PARAMETER

CONDITIONS

MIN

1.2

MAX.

200

2.2

I_DSS

I_GSS

V_TH

Pout

ηD1

Zero gate voltage drain current V_DS=17V, V_GS=0V

Gate to source leak current

Gate threshold voltage

Output power

V_GS=10V, V_DS=0V

V_DS=12V, I_DS=1mA

f=520MHz,V_DD=12.5V

Pin=3W,Idq=1.0A

1.7

Drain efficiency

Load VSWR tolerance

V_DD=15.2V,Po=30W(PinControl)

f=520MHz,Idq=1.0A,Zg=50Ω

Load VSWR=20:1(All Phase)

No destroy

Note : Above parameters , ratings , limits and conditions are subject to change.

RD30HUF1

10 Jan 2006

MITSUBISHI ELECTRIC

1/7

12 3 4 5 6 7

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