Datasheet > RD30HVF1_10

RD30HVF1_10

更新时间： 2024-09-12 09:36:43

品牌	Logo	应用领域
三菱 - MITSUBISHI		晶体晶体管
页数	文件大小	规格书
8页	335K
描述
Silicon MOSFET Power Transistor,175MHz,30W

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中文翻译

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RD30HVF1_10 数据手册

Silicon RF Power Semiconductors

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RD30HVF1

RoHS Compliance,

Silicon MOSFET Power Transistor,175MHz,30W

DESCRIPTION

RD30HVF1 is a MOS FET type transistor specifically

designed for VHF RF power amplifiers applications.

OUTLINE DRAWING

22.0+/-0.3

18.0+/-0.3

7.2+/-0.5

7.6+/-0.3

4-C1

FEATURES

High power gain:

Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz

High Efficiency: 60%typ.

R1.6

2.8+/-0.3

APPLICATION

For output stage of high power amplifiers in VHF band

Mobile radio sets.

1.Drain

2.Source

3.Gate

UNIT:mm

RoHS COMPLIANT

RD30HVF1-101 is a RoHS compliant products.

RoHS compliance is indicate by the letter “G” after

the Lot Marking.

ABSOLUTE MAXIMUM RATINGS

(Tc=25 UNLESS OTHERWISE NOTED)

°C

SYMBOL

V_DSS

V_GSS

Pch

PARAMETER

Drain to source voltage

Gate to source voltage

Channel dissipation

Input power

CONDITIONS

Vgs=0V

Vds=0V

Tc=25°C

Zg=Zl=50Ω

RATINGS UNIT

+/-20

2.5

Drain current

°C

°C/W

Tch

Tstg

Rth j-c

Channel temperature

Storage temperature

Thermal resistance

175

-40 to +175

2.0

junction to case

Note 1: Above parameters are guaranteed independently.

ELECTRICAL CHARACTERISTICS (Tc=25 , UNLESS OTHERWISE NOTED)

°C

LIMITS

TYP

UNIT

SYMBOL

PARAMETER

CONDITIONS

MIN

1.3

MAX.

130

2.3

I_DSS

I_GSS

V_TH

Pout

ηD

Zero gate voltage drain current V_DS=17V, V_GS=0V

Gate to source leak current

Gate threshold voltage

Output power

V_GS=10V, V_DS=0V

V_DS=12V, I_DS=1mA

f=175MHz ,V_DD=12.5V

Pin=1.0W, Idq=0.5A

1.8

Drain efficiency

Load VSWR tolerance

V_DD=15.2V,Po=30W(PinControl)

f=175MHz,Idq=0.5A,Zg=50Ω

Load VSWR=20:1(All Phase)

No destroy

Note : Above parameters , ratings , limits and conditions are subject to change.

RD30HVF1

17 Aug 2010

1/8

12 3 4 5 6 7 8

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