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RB715W

更新时间: 2024-11-18 03:37:55
品牌 Logo 应用领域
TRSYS 肖特基二极管光电二极管
页数 文件大小 规格书
1页 62K
描述
SCHOTTKY BARRIER DIODE

RB715W 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
风险等级:5.75Base Number Matches:1

RB715W 数据手册

  
SOT-523  
RB715W SCHOTTKY BARRIER DIODE  
FEATURES:  
Power dissipation  
PD:  
200 mW (Tamb=25)  
Collector current  
IF:  
30 mA  
Collector-base voltage  
VR:  
40  
V
Operating and storage junction temperature range  
TJ, Tstg: -55to +150℃  
CIRCUIT:  
1
2
3
MARKING: 3D  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)  
IR  
Test conditions  
MIN  
MAX  
UNIT  
V
Reverse breakdown voltage  
Reverse voltage leakage current  
40  
IR= 100µA  
VR=10V  
1
µA  
Forward voltage  
VF  
V
IF=1mA  
0.37  
2
Diode capacitance  
CD  
VR=1V, f=1MHz  
pF  

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