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RB715W_11 PDF预览

RB715W_11

更新时间: 2024-11-18 12:20:27
品牌 Logo 应用领域
罗姆 - ROHM 二极管
页数 文件大小 规格书
4页 980K
描述
Shottky barrier diode

RB715W_11 数据手册

 浏览型号RB715W_11的Datasheet PDF文件第2页浏览型号RB715W_11的Datasheet PDF文件第3页浏览型号RB715W_11的Datasheet PDF文件第4页 
Data Sheet  
Shottky barrier diode  
RB715W  
Applications  
Dimensions (Unit : mm)  
Land size figure (Unit : mm)  
Low current rectification  
1.0  
0.5  
0.5  
1.6±0.2  
0.3±0.1  
0.15±0.05  
ꢀꢀꢀ 0.05  
(3)  
Features  
0.7  
1) Ultra small power mold type. (EMD3)  
2) Low IR  
0~0.1  
3) High reliability.  
0.6  
0.6  
(1)  
(2)  
0.5  
0.2±0.1  
ꢀꢀ-0.05  
EMD3  
0.55±0.1  
0.7±0.1  
0.5  
1.0±0.1  
Construction  
Structure  
Silicon epitaxial planar  
ROHM : EMD3  
JEDEC : SOT-416  
JEITA : SC-75A  
dot (year week factory)  
Taping specifications (Unit : mm)  
φ1.5 0.1  
2.0±0.05  
0.3±0.1  
4.0±0.1  
0  
1.8±0.1  
φ0.5±0.1  
0.9±0.2  
Absolute maximum ratings (Ta=25°C)  
Parameter  
Limits  
40  
Symbol  
Unit  
V
Reverse voltage (repetitive peak)  
Reverse voltage (DC)  
VRM  
VR  
40  
V
Average rectified forward current  
Forward current surge peak (60Hz1cyc) (*1)  
Junction temperature  
30  
Io  
mA  
mA  
°C  
°C  
200  
125  
IFSM  
Tj  
Storage temperature  
40 to 125  
Tstg  
(*1) Rating of per diode  
Electrical characteristics (Ta=25°C)  
Parameter  
Conditions  
Symbol  
Min.  
Typ.  
Max.  
Unit  
V
Forward voltage  
VF  
IR  
-
-
-
-
-
0.37  
IF=1mA  
Reverse current  
1
-
μA  
pF  
VR=10V  
Capacitance between terminals  
VR=1.0V f=1.0MHz  
Ct  
2.0  
www.rohm.com  
2011.04 - Rev.C  
© 2011 ROHM Co., Ltd. All rights reserved.  
1/3  

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