Datasheet > RB715W_11

RB715W_11

更新时间： 2022-04-01 16:16:00

品牌	Logo	应用领域
罗姆 - ROHM		二极管
页数	文件大小	规格书
4页	980K
描述
Shottky barrier diode

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RB715W_11 数据手册

Data Sheet

Shottky barrier diode

RB715W

Applications

Dimensions (Unit : mm)

Land size figure (Unit : mm)

Low current rectification

1.0

0.5

1.6±0.2

0.3±0.1

0.15±0.05

ꢀꢀꢀ 0.05

(3)

Features

0.7

1) Ultra small power mold type. (EMD3)

2) Low I^R

0～0.1

3) High reliability.

0.6

(1)

(2)

0.5

0.2±0.1

ꢀꢀ-0.05

EMD3

0.55±0.1

0.7±0.1

0.5

1.0±0.1

Construction

Structure

Silicon epitaxial planar

ROHM : EMD3

JEDEC : SOT-416

JEITA : SC-75A

dot (year week factory)

Taping specifications (Unit : mm)

φ1.55±0.1

φ1.5 0.1

2.0±0.05

0.3±0.1

4.0±0.1

0

ꢀꢀꢀꢀꢀ

1.8±0.1

φ0.5±0.1

0.9±0.2

Absolute maximum ratings (Ta=25°C)

Parameter

Limits

Symbol

Unit

Reverse voltage (repetitive peak)

Reverse voltage (DC)

V_RM

V_R

Average rectified forward current

Forward current surge peak (60Hz・1cyc) (*1)

Junction temperature

°C

200

125

I_FSM

Storage temperature

40 to 125

Tstg

(*1) Rating of per diode

Electrical characteristics (Ta=25°C)

Parameter

Conditions

Symbol

Min.

Typ.

Max.

Unit

Forward voltage

V_F

I_R

0.37

I_F=1mA

Reverse current

μA

V_R=10V

Capacitance between terminals

V_R=1.0V f=1.0MHz

2.0

www.rohm.com

2011.04 - Rev.C

1/3

12 3 4

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