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RB715WMTL PDF预览

RB715WMTL

更新时间: 2024-11-21 13:12:51
品牌 Logo 应用领域
罗姆 - ROHM 整流二极管肖特基二极管
页数 文件大小 规格书
4页 200K
描述
Rectifier Diode, Schottky, 2 Element, 0.03A, 40V V(RRM), Silicon, SC-89, 3 PIN

RB715WMTL 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SC-89, 3 PINReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
Factory Lead Time:12 weeks风险等级:5.58
其他特性:HIGH RELIABILITY配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-F3元件数量:2
端子数量:3最高工作温度:125 °C
最大输出电流:0.03 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:40 V
表面贴装:YES技术:SCHOTTKY
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

RB715WMTL 数据手册

 浏览型号RB715WMTL的Datasheet PDF文件第2页浏览型号RB715WMTL的Datasheet PDF文件第3页浏览型号RB715WMTL的Datasheet PDF文件第4页 
RB715F  
Diodes  
Shottky barrier diode  
RB715F  
zApplication  
zExternal dimensions (Unit : mm)  
zLead size figure (Unit : mm)  
Low current rectification  
1.3  
zFeatures  
2.0±0.2  
0.3±0.1  
1) Small mold type. (UMD3)  
各リードとも  
Each lead has same dimension  
0.15±0.05  
0.65  
2) Low V  
F
(3)  
3) High reliability.  
0.8MIN.  
UMD3  
0~0.1  
(2)  
(1)  
(0.65)  
(0.65)  
zConstruction  
Silicon epitaxial planer  
zStructure  
0.7±0.1  
0.9±0.1  
1.3±0.1  
ROHM : UMD3  
JEDEC : SOT-323  
JEITA : SC-70  
dot (year week factory)  
zTaping dimensions (Unit : mm)  
φ1.55±0.05  
2.0±0.05  
4.0±0.1  
0.3±0.1  
2.25±0.1  
ꢀꢀꢀꢀ 0  
φ0.5±0.05  
4.0±0.1  
1.25±0.1  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Limits  
Symbol  
VRM  
Unit  
V
Reverse voltage (repetitive peak)  
Reverse voltage (DC)  
40  
40  
30  
VR  
V
Average rectified forward current  
Io  
IFSM  
Tj  
mA  
mA  
Forward current surge peak (60Hz1cyc) (*1)  
Junction temperature  
200  
125  
Storage temperature  
-40 to +125  
Tstg  
(*1)Rating of per diode  
zElectrical characteristics (Ta=25°C)  
Parameter  
Forward voltage  
Conditions  
Symbol  
Min.  
Typ.  
Max.  
Unit  
VF  
IR  
-
-
-
-
-
0.37  
V
IF=1mA  
Reverse current  
1
-
µA  
pF  
VR=10V  
Capacitance between terminals  
VR=1V f=1MHz  
Ct  
2.0  
Rev.B  
1/3  

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