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RB717F PDF预览

RB717F

更新时间: 2024-11-18 09:37:51
品牌 Logo 应用领域
金誉半导体 - HTSEMI 肖特基二极管
页数 文件大小 规格书
2页 297K
描述
SCHOTTKY BARRIER DIODE

RB717F 数据手册

 浏览型号RB717F的Datasheet PDF文件第2页 
RB717F  
SOT-323  
SCHOTTKY BARRIER DIODE  
FEATURES:  
Low VF, Low VR  
High reliability  
MARKING: 3E·  
Maximum Ratings @TA=25  
Parameter  
Symbol  
VRM  
VR  
Limits  
40  
Unit  
V
Peak reverse voltage  
DC reverse voltage  
40  
V
Peak forward surge current  
Average forward current  
Power dissipation  
IFSM  
IO  
200  
mA  
mA  
mW  
30  
PD  
200  
Junction temperature  
Storage temperature  
Tj  
125  
Tstg  
-40-125  
ELECTRICAL CHARACTERISTICS (Tamb=25  
unless otherwise specified)  
Parameter  
Symbol  
Test  
conditions  
VR=10V  
MIN  
TYP  
MAX  
UNIT  
Reverse voltage leakage current  
IR  
1
μA  
Forward voltage  
VF  
CT  
V
IF=1mA  
VR=1V, f=1MHz  
0.37  
2.0  
Capacitance between terminals  
pF  
1
JinYu  
semiconductor  
www.htsemi.com  
Date:2011/05  

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