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RB721Q-40 PDF预览

RB721Q-40

更新时间: 2024-10-28 22:10:15
品牌 Logo 应用领域
美台 - DIODES 肖特基二极管
页数 文件大小 规格书
3页 73K
描述
Schottky barrier diode

RB721Q-40 数据手册

 浏览型号RB721Q-40的Datasheet PDF文件第2页浏览型号RB721Q-40的Datasheet PDF文件第3页 
RB721Q-40  
Diodes  
Schottky barrier diode  
RB721Q-40  
!Applications  
High speed switching  
!External dimensions (Units : mm)  
CATHODE BAND (BLACK)  
φ0.4 0.1  
!Features  
1) Glass-sealed envelope for high reliability. (MSD)  
2) Small pitch enables insertion on PCBs.  
3) Low VF and low IR.  
φ1.8 0.2  
29  
1
2.7 0.3  
29 1  
ROHM : MSD  
EIAJ :  
JEDEC : DO-34  
S
!Construction  
Silicon epitaxial planar  
Product identification number  
2
is stamped on body of main unit.  
!Absolute maximum ratings (Ta=25°C)  
Parameter  
Peak reverse voltage  
DC reverse voltage  
Mean rectifying current  
Peak forward surge current  
Junction temperature  
Storage temperature  
60 Hz for 1  
Symbol  
Limits  
40  
Unit  
V
V
RM  
V
R
40  
V
I
O
30  
mA  
mA  
°C  
°C  
I
FSM  
200  
Tj  
125  
Tstg  
40~+125  
!Electrical characteristics (Ta=25°C)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
0.37  
0.5  
Unit  
V
Conditions  
Forward voltage  
VF  
IR  
IF=1mA  
Reverse current  
µA  
pF  
VR=25V  
Capacitance between terminals  
Note) ESD sensitive product handling required.  
CT  
2.0  
VR=1V, f=1MHz  

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