Datasheet > RB717F_08

RB717F_08

更新时间： 2024-11-18 09:37:51

品牌	Logo	应用领域
罗姆 - ROHM		肖特基二极管
页数	文件大小	规格书
4页	165K
描述
Schottky barrier diode

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中文翻译

获取价格

数据手册

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RB717F_08 数据手册

RB717F

Diodes

Schottky barrier diode

RB717F

zApplications

z External dimensions (Unit : mm)

z Land size figure (Unit : mm)

Low current rectification

㪈㪅㪊

ꢀꢁꢂrꢂꢁꢀ

ꢂꢁꢅrꢂꢁꢃ

ฦ

߽ߣ࠼࡯࡝

Each lead has same dimension

zFeatures

ꢂꢁꢃꢄrꢂꢁꢂꢄ

หኸᴺ

㪇㪅㪍㪌

1) Small mold type. (UMD3)

2) Low V_F

ꢆꢅꢇ

3) High reliability.

㪇㪅㪏㪤㪠㪥

ꢂ㨪ꢂꢁꢃ

ꢆꢀꢇ

ꢆꢃꢇ

㪬㪤㪛㪊

zStructure

㧔ꢂꢁꢈꢄ㧕

ꢂꢁꢊrꢂꢁꢃ

ꢂꢁꢉrꢂꢁꢃ

ꢃꢁꢅrꢂꢁꢃ

㩷

zConstruction

Silicon epitaxial planar

㪩㪦㪟㪤㩷㪑㩷㪬㪤㪛㪊

㪡㪜㪛㪜㪚㩷㪑㩷㪪㪦㪫㪄㪊㪉㪊

㪡㪜㪠㪫㪘㩷㪑㩷㪪㪚㪄㪎㪇

㪻㫆㫋㩷㩿㫐㪼㪸㫉㩷㫎㪼㪼㫂㩷㪽㪸㪺㫋㫆㫉㫐㪀

z Taping specifications (Unit : mm)

㱢㪈㪅㪌㪌㫧㪇㪅㪇㪌

㪉㪅㪇㫧㪇㪅㪇㪌

㪋㪅㪇㫧㪇㪅㪈

㪇㪅㪊㫧㪇㪅㪈

㪉㪅㪉㪌㫧㪇㪅㪈

䇭䇭䇭䇭㩷㪇

㱢㪇㪅㪌㫧㪇㪅㪇㪌

㪋㪅㪇㫧㪇㪅㪈

㪈㪅㪉㪌㫧㪇㪅㪈

zAbsolute maximum ratings (Ta=25qC)

Parameter

Limits

Symbol

V_RM

V_R

Unit

Reverse voltage (repetitive peak)

Reevrse voltage (DC)

Average rectifoed forward currenẗ́*1ͅ

Forward current surge peak 䋨60Hz䊶1cyc䋩䋨*1䋩

Junction temperature

I_FSM

㷄

200

125

Storage temperature

-40 to +125

Tstg

㷄

(*1) Rating of per diode

zElectrical characteristics (Ta=25qC)

Parameter

Forward voltage

Conditions

Symbol

Min.

Typ.

Max.

Unit

V_F

I_R

0.37

I_F=1mA

Reverse current

μA

V_R=10V

Capacitance between terminals

V_R=1V,f=1MHz

2.0

Rev.B

1/3

12 3 4

中文翻译

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