Datasheet > RB717F

RB717F

更新时间： 2024-09-24 03:37:55

品牌	Logo	应用领域
TRSYS		肖特基二极管
页数	文件大小	规格书
1页	64K
描述
SCHOTTKY BARRIER DIODE

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中文翻译

获取价格

数据手册

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RB717F 数据手册

SOT-323

RB717F SCHOTTKY BARRIER DIODE

FEATURES:

1. 25¡ À0. 05

Power dissipation

2. 30¡ À0. 05

P_D:

200 mW (Tamb=25℃)

Collector current

I_F:

30 mA

Collector-base voltage

V_R:

Unit: mm

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

CIRCUIT:

MARKING: 3E

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)

I_R

Test conditions

MIN

MAX

UNIT

Reverse breakdown voltage

Reverse voltage leakage current

I_R= 100µA

V_R=10V

µA

Forward voltage

V_F

I_F=1mA

0.37

Diode capacitance

C_D

V_R=1V, f=1MHz

中文翻译

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