Datasheet > RB717F

RB717F

更新时间： 2024-09-25 14:55:43

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1421K
描述
SOT-323

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数据手册

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RB717F 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-323 Plastic-Encapsulate Diodes

SOT-323

RB717F

SCHOTTKY BARRIER DIODE

FEATURES:

Low V_F, Low V_R

High reliability

MARKING: 3E·

Solid dot = Green molding compound device.

Maximum Ratings @Ta=25 ℃

Parameter

Symbol

V_RM

Limit

Unit

Peak reverse voltage

DC reverse voltage

V_R

Non-repetitive Peak Forward Surge

Current@t=8.3ms

I_FSM

200

℃/W

℃

Average forward current

I_O

Power dissipation

P_D

200

R_θ

Thermal Resistance Junction to Ambient

Operating Junction Temperature Range

Storage Temperature Range

500

T_j

-40 ~ +125

T_stg

-55 ~ +150

℃

ELECTRICAL CHA RACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Reverse voltage leakage current

I_R

V_R=10V

μA

Forward voltage

V_F

C_T

I_F=1mA

0.37

2.0

Capacitance between terminals

V_R=1V, f=1MHz

www.jscj-elec.com

Rev. - 2.1

12 3 4

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