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RB715F PDF预览

RB715F

更新时间: 2024-11-18 03:37:55
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical 肖特基二极管
页数 文件大小 规格书
3页 382K
描述
Schottky Barrier Diode

RB715F 数据手册

 浏览型号RB715F的Datasheet PDF文件第2页浏览型号RB715F的Datasheet PDF文件第3页 
BL Galaxy Electrical  
Production specification  
Schottky Barrier Diode  
RB715F  
FEATURES  
Pb  
Lead-free  
z
z
z
Extra small power mold type.  
Low VF.  
High reliability.  
APPLICATIONS  
z
General purpose application.  
SOT-323  
ORDERING INFORMATION  
Type No.  
RB715F  
Marking  
3D  
Package Code  
SOT-323  
MAXIMUM RATING @ Ta=25unless otherwise specified  
Parameter  
Symbol  
VRM  
VR  
Limits  
Unit  
V
Peak reverse voltage  
40  
Diode reverse voltage  
40  
V
Average forward current  
IF  
30  
mA  
Forward Surge Current  
t=1μS  
IFS  
200  
mA  
Power Dissipation  
Pd  
Tj  
150  
mW  
Junction temperature  
Storage temperature range  
125  
Tstg  
-40-+125  
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified  
Parameter  
Symbol  
V(BR)R  
IR  
Test  
conditions  
MIN  
MAX  
UNIT  
V
Reverse breakdown voltage  
Reverse voltage leakage current  
Forward voltage  
IR= 100μA  
VR=10V  
IF=1mA  
40  
1
μA  
VF  
mV  
370  
Diode capacitance  
CD  
VR=1V f=1MHz  
2.0  
pF  
Document number: BL/SSSKF027  
Rev.A  
www.galaxycn.com  
1

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