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RB715FT106 PDF预览

RB715FT106

更新时间: 2024-02-22 07:15:18
品牌 Logo 应用领域
罗姆 - ROHM 整流二极管肖特基二极管光电二极管PC
页数 文件大小 规格书
6页 316K
描述
Schottky Barrier Diode

RB715FT106 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:SC-70
包装说明:SC-70, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70Factory Lead Time:12 weeks
风险等级:1.11Samacsys Confidence:2
Samacsys Status:Released2D Presentation:https://componentsearchengine.com/2D/0T/471905.2.2.png
Schematic Symbol:https://componentsearchengine.com/symbol.php?partID=471905PCB Footprint:https://componentsearchengine.com/footprint.php?partID=471905
3D View:https://componentsearchengine.com/viewer/3D.php?partID=471905Samacsys PartID:471905
Samacsys Image:https://componentsearchengine.com/Images/9/RB715FT106.jpgSamacsys Thumbnail Image:https://componentsearchengine.com/Thumbnails/2/RB715FT106.jpg
Samacsys Pin Count:3Samacsys Part Category:Schottky Diode
Samacsys Package Category:OtherSamacsys Footprint Name:UMD3 (SC-70)
Samacsys Released Date:2018-09-05 16:49:15Is Samacsys:N
其他特性:HIGH RELIABILITY配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.37 VJESD-30 代码:R-PDSO-G3
JESD-609代码:e1湿度敏感等级:1
最大非重复峰值正向电流:0.2 A元件数量:2
端子数量:3最高工作温度:125 °C
最大输出电流:0.03 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:40 V最大反向电流:1 µA
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

RB715FT106 数据手册

 浏览型号RB715FT106的Datasheet PDF文件第2页浏览型号RB715FT106的Datasheet PDF文件第3页浏览型号RB715FT106的Datasheet PDF文件第4页浏览型号RB715FT106的Datasheet PDF文件第5页浏览型号RB715FT106的Datasheet PDF文件第6页 
Schottky Barrier Diode  
RB715F  
Datasheet  
lApplication  
lDimensions (Unit : mm)  
lLand size figure (Unit : mm)  
Low current rectification  
1.3  
2.0±0.2  
0.3±0.1  
各リードとも  
Each lead has same dimension  
0.15±0.05  
(3)  
0.65  
lFeatures  
1) Small mold type. (UMD3)  
UMD3  
0.8MIN.  
Low VF  
2)  
0~0.1  
(2)  
(1)  
3) High reliability.  
(0.65)  
(0.65)  
lStructure  
cathode  
0.7±0.1  
0.9±0.1  
1.3±0.1  
ROHM : UMD3  
JEDEC :SOT-323  
JEITA : SC-70  
dot (year week factory)  
lConstruction  
anode anode  
Silicon epitaxial planar  
lTaping specifications (Unit : mm)  
2.0±0.05  
4.0±0.1  
f1.550.05  
0.3±0.1  
2.25±0.1  
ꢀꢀꢀꢀ 0  
φ
f0.50.05  
4.0±0.1  
1.25±0.1  
lAbsolute maximum ratings (Ta= 25°C)  
Parameter  
Symbol  
Limits  
40  
Unit  
V
VRM  
VR  
Reverse voltage (repetitive peak)  
Reverse voltage (DC)  
40  
V
30  
Average rectified forward current  
Forward current surge peak (60Hz1cyc) (*1)  
Junction temperature  
Io  
mA  
mA  
°C  
°C  
IFSM  
Tj  
200  
125  
Storage temperature  
Tstg  
-40 to +125  
(*1) Rating of per diode  
lElectrical characteristics (Ta = 25°C)  
Parameter  
Conditions  
Symbol Min. Typ. Max.  
Unit  
V
VF  
IR  
IF=1mA  
Forward voltage  
-
-
-
-
-
0.37  
VR=10V  
Reverse current  
1
-
mA  
pF  
VR=1V f=1MHz  
Capacitance between terminals  
Ct  
2.0  
www.rohm.com  
© 2013 ROHM Co., Ltd. All rights reserved.  
2013.04 - Rev.C  
1/5  

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