RB521ZS8A30

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RB521ZS8A30 技术参数

RB521ZS8A30 | Schottky Barrier Diodes | Discrete Semiconductors | ROHM CO., LTD.

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Schottky Barrier Diodes

RB521ZS8A30

[ Product description ]

Outline

ROHM's schottky barrier diodes are low VF, low IR and high ESD resistant,

suitable for PC,mobile phone and various portable electronics.

Features

EUltra-small mold type.

EMulti-diodes package.

Product specifications

1.6x0.8(t=0.3)

Absolute maximum ratings (Ta=25ºC)

Dimensions

Rated parameters

Standard value Conditions

Repetitive peak reverse voltage V (V)

Reverse voltage(DC) V (V)

Average rectified forward current I (A)

0.1

Forward current surge peak I

Junction temperature Tj(ºC)

(A)

0.5 60Hz/1cyc

FSM

150

Storage temperature Tstg(ºC)

-55 to +150

Equivalent circuit diagram

*The contents described here are just outline for introduction.

Please obtain the specification sheets from us for thorough check before use.

http://www.rohm.com/products/discrete/diode/schottky_barrier/rb521zs8a30/print.html

6/17/2010

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型号	品牌	获取价格	描述	数据表
RB521ZS8A30TE61	ROHM	获取价格	Rectifier Diode, Schottky, 4 Element, 0.1A, 30V V(RRM), Silicon, DFN1608-8, 8 PIN
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