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RB530V-30 PDF预览

RB530V-30

更新时间: 2024-11-22 15:19:31
品牌 Logo 应用领域
扬杰 - YANGJIE /
页数 文件大小 规格书
4页 330K
描述
SOD-323

RB530V-30 数据手册

 浏览型号RB530V-30的Datasheet PDF文件第2页浏览型号RB530V-30的Datasheet PDF文件第3页浏览型号RB530V-30的Datasheet PDF文件第4页 
RoHS  
COMPLIANT  
RB530V-30  
Schottky Barrier Diode  
Features  
● VR 30V  
IF 200mA  
Typical Applications  
Low Forward Voltage Drop  
Mechanical Data  
ackage: SOD-323  
P
Terminals: Tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
Cathode line denotes the cathode end  
B
Polarity:  
Marking:  
■Limiting Values (Absolute Maximum Rating)  
Limit  
Max  
Item  
Symbol  
Unit  
mW  
Conditions  
Power Dissipation  
PD  
Tamb ≤ 25 °C  
200  
Storage Temperature  
Junction Temperature  
DC Reverse Voltage  
TSTG  
TJ  
-40 to +125  
125  
30  
VR  
V
IR= 500uA  
Average Rectified Forward Current  
Peak Forward Surge Current  
IFAV  
mA  
A
200  
1
IFSM  
8.3ms single half sine-wave  
■Electrical CharacteristicsT =25Unless otherwise specified)  
a
Item  
Symbol  
Unit  
Conditions  
IR= 500uA  
IF=200mA  
VR=10V  
Min  
Max  
Breakdown Voltage  
Forward Voltage  
VR  
VF  
IR  
V
30  
-
-
0.6  
1
V
Reverse Leakage Current  
uA  
-
1 / 4  
S-S2528  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com  
Rev.1.3,10-Jan-23  

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