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RB530CM-30 PDF预览

RB530CM-30

更新时间: 2024-11-26 11:12:27
品牌 Logo 应用领域
罗姆 - ROHM 光电二极管
页数 文件大小 规格书
7页 1708K
描述
RB530CM-30是低VF的一般整流用途的肖特基势垒二极管。

RB530CM-30 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:VMN2M, 2 PINReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.65其他特性:HIGH RELIABILITY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-F2
元件数量:1端子数量:2
最高工作温度:150 °C最大输出电流:0.1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:30 V表面贴装:YES
技术:SCHOTTKY端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

RB530CM-30 数据手册

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RB530CM-30  
Schottky Barrier Diode  
Data sheet  
Outline  
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ ꢀꢀꢀꢀ  
V
30  
100  
0.5  
V
mA  
A
R
I
o
I
FSM  
ꢀ ꢀ  
Features  
Inner Circuit  
High reliability  
Small mold type  
Low V  
F
Application  
Packaging Specifications  
Packing  
Small current rectification  
Embossed Tape  
Reel Size(mm)  
Taping Width(mm)  
Quantity(pcs)  
180  
8
8000  
T2R  
Y
Structure  
Epitaxial planar  
Taping Code  
Marking  
(T = 25ºC unless otherwise stated)  
Absolute Maximum Ratings  
c
Parameter  
Repetitive peak reverse voltage  
Reverse voltage  
Symbol  
Conditions  
Duty0.5  
Reverse direct voltage  
Limits  
30  
30  
Unit  
V
V
V
RM  
V
R
Glass epoxy mounted60Hz half sin  
waveformresistiveload  
I
Average rectified forward current  
Peak forward surge current  
100  
0.5  
mA  
A
o
60Hz half sinwaveform、  
I
FSM  
Non-repetitiveonecycleT =25℃  
a
T
T
stg  
Junction temperature  
Storage temperature  
-
-
150  
-55 150  
j
(T = 25ºC unless otherwise stated)  
Characteristics  
j
Parameter  
Symbol  
Conditions  
I =10mA  
F
V =10V  
R
Min. Typ. Max. Unit  
V
Forward voltage  
Reverse current  
Cautionstatic electricity  
Attention  
-
-
0.46  
V
F
I
R
-
-
0.3  
μA  
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www.rohm.com  
©2016 ROHMCo., Ltd.All rights reserved.  
1/4  
2019/07/16_Rev.006  

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