Datasheet > RB520G30-G

RB520G30-G

更新时间： 2024-01-09 14:51:25

品牌	Logo	应用领域
上华 - COMCHIP		二极管
页数	文件大小	规格书
2页	52K
描述
SMD Schottky Barrier Diode

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中文翻译

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技术参数
数据手册

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RB520G30-G 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.84	Base Number Matches：	1

RB520G30-G 数据手册

SMD Schottky Barrier Diode

RB520G30-G (RoHS Device)

Reverse Voltage: 30 Volts

Forward Current: 100 mA

SOD-723

Features:

Small Surface Mounting Type

Low Reverse Current and Low Forward Voltage.

High Reliability

Mechanical Data:

Case: Molded plastic SOD-723

Inches

Min.

Millimeters

Terminals: Solderable per MIL-STD-750, Method

2026.1.

Symbol

Max.

0.026

0.023

0.014

0.006

0.026

0.043

0.059

Min.

Max.

0.650

0.580

0.350

0.150

0.650

1.100

1.500

0.021

0.020

0.010

0.003

0.022

0.035

0.051

0.525

0.515

0.250

0.080

0.550

0.900

1.300

Polarity: Indicated by cathode band.

Mounting position: Any.

Marking: E

0.008 REF

0.200 REF

0.001

0.003

0.010

0.070

7 REF

Maximum Ratings (at T_A=25ºC unless otherwise specified)

Parameter

Symbol

Limits

Unit

DC reverse voltage

Mean rectifying current

Peak forward surge current

Junction temperature

Storage temperature

100

ºC

500

FSM

125

stg

-40~+125

ºC

Electrical Ratings (at T_A=25ºC unless otherwise specified)

Parameter

Symbol

Min. Typ. Max. Unit Conditions

Forward voltage

Reverse current

0.45

0.5

I =10mA

μA

V =10V

“-G” suffix designated RoHS compliant version

Page1

Comchip Technology Corporation Tel:510-657-8671 Fax: 510-657-8921 www.comchiptech.com

中文翻译

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