Datasheet > RB520S-30

RB520S-30

更新时间： 2024-11-18 03:37:55

品牌	Logo	应用领域
TRSYS		二极管光电二极管
页数	文件大小	规格书
2页	90K
描述
Schottky barrier Diodes

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中文翻译

获取价格

数据手册

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RB520S-30 数据手册

RB520S-30 Schottky barrier Diodes

FEATURES

z Small surface mounting type

z Low reverse current and low forward voltage

z High reliability

Maximum Ratings and Electrical Characteristics, Single Diode @T_A=25℃

Parameter

DC reverse voltage

Symbol

V_R

Limits

Unit

Mean rectifying current

Peak forward surge current

I_O

200

I_FSM

Junction temperature

Storage temperature

T_j

125

℃

T_stg

-45~+125

Electrical Ratings @T_A=25℃

Parameter

Symbol Min. Typ. Max. Unit

Conditions

Forward voltage

Reverse current

V_F

I_R

0.6

1.0

I_F=200mA

V_R=10V

µA

中文翻译

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