Datasheet > RB520S30-Q

RB520S30-Q

更新时间： 2024-09-24 17:15:15

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
11页	235K
描述
200 mA low VF Schottky barrier rectifierProduction

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RB520S30-Q 数据手册

RB520S30-Q

200 mA low VF Schottky barrier rectifier

17 April 2024

Product data sheet

1. General description

Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in

a SOD523 (SC-79) ultra small and flat lead Surface-Mounted Device (SMD) plastic package.

2. Features and benefits

•

Average forward current: I_F(AV)≤ 0.2 A

•

Reverse voltage: V_R≤ 30 V

Low reverse current: I_R≤ 1 uA

Ultra small and flat lead SMD plastic package

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Low current rectification

High efficiency DC-to-DC conversion

Switch Mode Power Supply (SMPS)

Reverse polarity protection

Low power consumption applications

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

I_F(AV)

average forward

current

δ = 0.5; f = 20 kHz; square wave; T_amb≤ [1]

105 °C

200

δ = 0.5; f = 20 kHz; square wave; T_sp

135 °C

≤

200

I_R

reverse current

reverse voltage

forward voltage

V_R= 10 V; T_j= 25 °C

T_j= 25 °C

µA

V_R

V_F

600

I_F= 200 mA; pulsed; t_p≤ 300 µs; δ ≤

0.02; T_j= 25 °C

520

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm².

12 3 4 5 6 7...11

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