Datasheet > RB520S-30_12

RB520S-30_12

更新时间： 2024-11-18 07:17:59

品牌	Logo	应用领域
上华 - COMCHIP		二极管
页数	文件大小	规格书
4页	102K
描述
SMD Schottky Barrier Diodes

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中文翻译

获取价格

数据手册

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RB520S-30_12 数据手册

SMD Schottky Barrier Diodes

RB520S-30

VR = 30 Volts

RoHS Device

Io = 200 mA

Features

SOD-523

Low reverse current.

Designed for mounting on small surface.

Extremely thin package.

Majority carrier conduction.

0.008(0.20)

REF

0.051(1.30)

0.043(1.10)

0.014(0.35)

0.010(0.25)

0.033(0.85)

0.030(0.75)

Mechanical data

0.067(1.70)

0.059(1.50)

Case: SOD-523 standard package,

molded plastic.

0.006(0.15)

0.003(0.08)

Terminals: solderable per MIL-STD-750

,method 2026.

0.031(0.77)

0.020(0.51)

0.003(0.07)

0.001(0.01)

Marking code: cathode band & B

Mounting position: Any

Dimensions in inches and (millimeter)

Weight: 0.0012 gram(approx.).

Circuit Diagram

Maximum Ratings (at TA=25°C unless otherwise noted)

Symbol

Typ

Max Unit

Parameter

Conditions

Min

DCReverse voltage

Mean rectkfying current

200

8.3ms single half sine-wave superimposed

on rate load(JEDEC method)

Peak forward surge current

IFSM

Storage temperature

Junction temperature

TSTG

-40

+125

Electrical Characteristics (At Ta=25°C, unless otherwise noted)

Symbol

Typ

Max Unit

Parameter

Conditions

Min

Forward voltage

IF = 200 mA

VR = 10 V

0.6

Reverse current

µA

REV:B

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中文翻译

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