Datasheet > RB520M-30

RB520M-30

更新时间： 2023-12-06 20:03:08

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
3页	184K
描述
肖特基二极管

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中文翻译

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数据手册

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RB520M-30 数据手册

RB520M-30

Silicon Epitaxial Planar Schottky Barrier Diode

PINNING

DESCRIPTION

Cathode

Features

Anode

• High reliability

• Extremely small surface mounting type

Top View

Marking Code: "B"

Applications

Simplified outline SOD-523 and symbol

• for low current rectification and high speed

switching applications

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

Value

Unit

Reverse Voltage

V_R

I_F(AV)

I_FSM

T_j

Average Forward Rectified Current ¹⁾

Peak Forward Surge Current (t = 8.3 ms)

Junction Temperature

200

150

℃

Storage Temperature Range

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.

T_stg

- 40 to + 150

Characteristics at T_a= 25℃

Parameter

Symbol

V_F

Max.

Unit

Forward Voltage

at I_F= 100 mA

at I_F= 200 mA

0.51

0.58

Reverse Current

at V_R= 10 V

I_R

µA

1 / 3

Dated：01/12/2021 Rev: 02

12 3

中文翻译

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