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RB520S-30 PDF预览

RB520S-30

更新时间: 2024-11-18 06:07:11
品牌 Logo 应用领域
上华 - COMCHIP 二极管光电二极管
页数 文件大小 规格书
4页 172K
描述
SMD Schottky Barrier Diode

RB520S-30 数据手册

 浏览型号RB520S-30的Datasheet PDF文件第2页浏览型号RB520S-30的Datasheet PDF文件第3页浏览型号RB520S-30的Datasheet PDF文件第4页 
SMD Schottky Barrier Diode  
SMD Diodes Specialist  
(RoHS Device)  
RB520S-30  
Io = 200 mA  
VR = 30 Volts  
SOD-523  
0.051(1.30)  
0.043(1.10)  
Features  
Low reverse current.  
Designed for mounting on small surface.  
Extremely thin / leadless package.  
Majority carrier conduction.  
0.033(0.85)  
0.030(0.75)  
0.014(0.35)  
0.010(0.25)  
0.067(1.70)  
0.059(1.50)  
Mechanical data  
Case: SOD523 standard package,  
molded plastic.  
0.031(0.77)  
0.020(0.51)  
0.006(0.15)  
0.003(0.08)  
Terminals: Gold plated, solderable per  
MIL-STD-750,method 2026.  
0.008(0.20)  
REF  
0.003(0.07)  
0.001(0.01)  
Marking code: cathode band & B  
Mounting position: Any  
Dimensions in inches and (millimeter)  
Weight: 0.0012 gram(approx.).  
Circuit Diagram  
Maximum Rating (at TA=25°C unless otherwise noted)  
Symbol  
Typ  
Max Unit  
Parameter  
Repetitive peak reverse voltage  
Conditions  
Min  
VRRM  
V
35  
V
Reverse voltage  
30  
VR  
mA  
A
Average forward current  
IO  
200  
1
8.3ms single half sine-wave superimposed  
on rate load(JEDEC method)  
Forward current,surge peak  
IFSM  
O
Storage temperature  
Junction temperature  
TSTG  
Tj  
-40  
+125  
+125  
C
O
C
Electrical Characteristics (at TA=25°C unless otherwise noted)  
Symbol  
Typ  
Max Unit  
Parameter  
Conditions  
Min  
Forward voltage  
IF = 200 mA  
VR = 10 V  
VF  
0.6  
V
Reverse current  
IR  
1
uA  
REV:A  
Page 1  
QW-BB023  
Comchip Technology CO., LTD.  

RB520S-30 替代型号

型号 品牌 替代类型 描述 数据表
RB520S-30 MCC

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