Datasheet > RB520S-30

RB520S-30

更新时间： 2024-11-19 14:54:47

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
3页	179K
描述
肖特基二极管

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数据手册

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RB520S-30 数据手册

RB520S-30

Silicon Epitaxial Planar Schottky Barrier Rectifier

for low current rectification and high speed

switching applications

PINNING

DESCRIPTION

Cathode

Anode

Features

• High reliability

• Extremely small surface mounting type

Top View

Simplified outline SOD-523 and symbol

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

Value

Unit

Reverse Voltage

V_R

I_F(AV)

I_FSM

P_D

Average Rectified Forward Current

Peak Forward Surge Current (t = 8.3 ms)

Power Dissipation

200

℃

Operating Junction Temperature Range

T_j

- 40 to + 125

Storage Temperature Range

T_stg

- 40 to + 125

℃

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

500

Unit

Thermal Resistance from Junction to Ambient ¹⁾

¹⁾Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.

℃/W

Characteristics at T_a= 25℃

Parameter

Symbol

V_(BR)R

Min.

Max.

Unit

Reverse Breakdown Voltage

0.6

at I_R= 100 µA

Forward Voltage

at I_F= 200 mA

V_F

I_R

Reverse Current

at V_R= 10 V

µA

1 / 3

Dated: 26/07/2022 Rev: 05

12 3

中文翻译

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