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RB208-LF PDF预览

RB208-LF

更新时间: 2024-11-21 19:32:59
品牌 Logo 应用领域
WTE 二极管
页数 文件大小 规格书
4页 57K
描述
Bridge Rectifier Diode, 1 Phase, 2A, 800V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, RB-20, 4 PIN

RB208-LF 数据手册

 浏览型号RB208-LF的Datasheet PDF文件第2页浏览型号RB208-LF的Datasheet PDF文件第3页浏览型号RB208-LF的Datasheet PDF文件第4页 
WTE  
POWER SEMICONDUCTORS  
Pb  
RB200 – RB2010  
2.0A SINGLE-PHASE BRIDGE RECTIFIER  
Features  
!
Diffused Junction  
!
!
!
!
!
!
Low Forward Voltage Drop  
High Current Capability  
High Reliability  
High Surge Current Capability  
Ideal for Printed Circuit Boards  
Recognized File # E157705  
A
B
+
~
~
-
RB-20  
Min  
Dim  
A
Max  
9.40  
7.40  
8.60  
6.90  
27.9  
25.4  
0.71  
4.60  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
B
C
D
C
Mechanical Data  
!
!
D
Case: RB-20, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
E
E
0.81  
5.60  
G
All Dimensions in mm  
~
!
!
!
!
!
Polarity: As Marked on Body  
Weight: 1.1 grams (approx.)  
Mounting Position: Any  
Marking: Type Number  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
-
+
G
G
~
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Symbol RB200 RB201 RB202 RB204 RB206 RB208 RB2010 Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
280  
2.0  
V
A
Average Rectified Output Current @TA = 50°C  
(Note 1)  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
I
FSM  
60  
A
Forward Voltage (per element)  
@IF = 2.0A  
VFM  
IRM  
1.0  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 100°C  
5.0  
500  
µA  
Operating Temperature Range  
Storage Temperature Range  
Tj  
-55 to +125  
-55 to +150  
°C  
°C  
TSTG  
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.  
RB200 – RB2010  
1 of 4  
© 2006 Won-Top Electronics  

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