Datasheet > QPD1019

QPD1019

更新时间： 2022-02-26 12:04:28

品牌	Logo	应用领域
TRIQUINT		/
页数	文件大小	规格书
19页	2224K
描述
500W, 50V, 2.9 â 3.3 GHz, GaN RF IMFET

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QPD1019 数据手册

QPD1019

500W, 50V, 2.9 – 3.3 GHz, GaN RF IMFET

RF Characterization – 2.9 – 3.3 GHz EVB Performance At 2.9 GHz¹

Parameter

Min

Typ

15.5

57.0

65.8

12.5

Max

Units

ꢁdB

Linear Gain, G_LIN

–

Output Power at 3dB compression point, P_3dB

Drain Efficiency at 3dB compression point, DEFF_3dB

Gain at 3dB compression point, G_3dB

Notes:

dBm

1. V_D= +50ꢁV, I_DQ= 750ꢁmA, Temp = 25°C, 100 uS PW, 10% DC

RF Characterization – 2.9 – 3.3 GHz EVB Performance At 3.1 GHz¹

Parameter

Min

Typ

16.3

57.0

62.3

13.3

Max

Units

ꢁdB

Linear Gain, G_LIN

–

Output Power at 3dB compression point, P_3dB

Drain Efficiency at 3dB compression point, DEFF_3dB

Gain at 3dB compression point, G_3dB

Notes:

dBm

1. V_D= +50ꢁV, I_DQ= 750ꢁmA, Temp = 25°C, 100 uS PW, 10% DC

RF Characterization – 2.9 – 3.3 GHz EVB Performance At 3.3 GHz¹

Parameter

Min

Typ

16.3

56.4

65.1

13.3

Max

Units

ꢁdB

Linear Gain, G_LIN

–

Output Power at 3dB compression point, P_3dB

Drain Efficiency at 3dB compression point, DEFF_3dB

Gain at 3dB compression point, G_3dB

Notes:

dBm

1. V_D= +50ꢁV, I_DQ= 750ꢁmA, Temp = 25°C, 100 uS PW, 10% DC

RF Characterization – Mismatch Ruggedness at 2.9, 3.1 & 3.3 GHz¹

Symbol Parameter

dB Compression

Typical

VSWR

Notes:

Impedance Mismatch Ruggedness

ꢁ10:1

1. Test conditions unless otherwise noted: T_A= 25°C, V_D= 50 V, I_DQ= 750 mA, 100 uS PW, 10% DC.

2. Driving input power is determined at pulsed compression under matched condition at EVB output connector.

3. No spur detected down to the noise floor of Spectrum Analyzer from 0.01 – 8GHz at T_A= -40°C.

Datasheet Rev. A, Mar 22, 2017 | Subject to change without notice

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