Datasheet > QPD1019

QPD1019

更新时间： 2024-02-20 21:23:44

品牌	Logo	应用领域
TRIQUINT		/
页数	文件大小	规格书
19页	2224K
描述
500W, 50V, 2.9 â 3.3 GHz, GaN RF IMFET

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QPD1019 数据手册

QPD1019

500W, 50V, 2.9 – 3.3 GHz, GaN RF IMFET

Absolute Maximum Ratings¹

Recommended Operating Conditions¹

Parameter

Min Typ Max Units

Parameter

Rating

Units

Operating Temp. Range

Drain Voltage Range, V_D

Drain Bias Current, I_DQ

−40 +25 +85

+28 +50 +55

ꢁ°C

Breakdown Voltage,BV_DG

Gate Voltage Range, V_G

Drain Current

+150

-8 to +2

–

750

–

Drain Current, I_D

Gate Current Range, I_G

See page 4.

Gate Voltage, V_G

−2.8

–

Power Dissipation, 10% DC

100 uS PW, P_D, T = 85°C

522

Channel Temperature (T_CH)

250

°C

Power Dissipation, Pulsed

(P_D)^{2, 3}

RF Input Power, 10% DC

100 uS PW, 3.1 GHz, T =

25°C

–

469

+49

dBm

Notes:

1. Electrical performance is measured under conditions noted

in the electrical specifications table. Specifications are not

guaranteed over all recommended operating conditions.

2. Package base at 85°C

3. Pulse Width = 100 uS, Duty Cycle = 10%

4. To be adjusted to desired I_DQ

Channel Temperature, T_CH

275

320^ꢁ

°C

Mounting Temperature

(30ꢀSeconds)

Storage Temperature

Notes:

−65 to +150

1. Operation of this device outside the parameter ranges

given above may cause permanent damage.

Pulsed Characterization – Load-Pull Performance – Power Tuned¹

Parameters

Frequency, F

Linear Gain, G_LIN

Typical Values

Unit

GHz

2.9

3.1

3.3

15.5

15.8

Output Power at 3dB

57.7

57.5

dBm

compression point, P_3dB

Power-Added-Efficiency at 3dB

compression point, PAE_3dB

58.8

12.5

Gain at 3dB compression point

13.5

12.8

Notes:

1. Test conditions unless otherwise noted: V_D= +50ꢁV, I_DQ= 750ꢁmA, Temp = 25°C, 100 uS PW, 10% DC

Pulsed Characterization – Load-Pull Performance – Efficiency Tuned¹

Parameters

Frequency, F

Linear Gain, G_LIN

Typical Values

Unit

GHz

3.1

3.3

16.1

17.5

16.7

Output Power at 3dB

56.4

55.9

66.8

14.5

56.1

dBm

compression point, P_3dB

Power-Added-Efficiency at 3dB

compression point, PAE_3dB

Gain at 3dB compression point,

G_3dB

13.1

13.7

Notes:

1. Test conditions unless otherwise noted: V_D= +50ꢁV, I_DQ= 750ꢁmA, Temp = 25°C, 100 uS PW, 10% DC

Datasheet Rev. A, Mar 22, 2017 | Subject to change without notice

www.qorvo.com

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与QPD1019相关器件

型号	品牌	获取价格	描述	数据表
QPD1019EVB01	TRIQUINT	获取价格	500W, 50V, 2.9 â 3.3 GHz, GaN RF IMFET
QPD1019S2	TRIQUINT	获取价格	500W, 50V, 2.9 â 3.3 GHz, GaN RF IMFET
QPD1020	TRIQUINT	获取价格	2.7 â 3.5 GHz, 50 V, 30 W GaN RF Input-Matc
QPD1020EVB01	TRIQUINT	获取价格	2.7 â 3.5 GHz, 50 V, 30 W GaN RF Input-Matc
QPD1020S2	TRIQUINT	获取价格	2.7 â 3.5 GHz, 50 V, 30 W GaN RF Input-Matc
QPD1020SQ	TRIQUINT	获取价格	2.7 â 3.5 GHz, 50 V, 30 W GaN RF Input-Matc
QPD1020SR	TRIQUINT	获取价格	2.7 â 3.5 GHz, 50 V, 30 W GaN RF Input-Matc
QPD1022	TRIQUINT	获取价格	10W, 32V, DC â 12 GHz, GaN RF Transistor
QPD1022EVB01	TRIQUINT	获取价格	10W, 32V, DC â 12 GHz, GaN RF Transistor
QPD1022S2	TRIQUINT	获取价格	10W, 32V, DC â 12 GHz, GaN RF Transistor

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