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QM100CY-H PDF预览

QM100CY-H

更新时间: 2024-11-15 22:07:11
品牌 Logo 应用领域
三菱 - MITSUBISHI 晶体开关晶体管功率双极晶体管局域网高功率电源
页数 文件大小 规格书
5页 76K
描述
HIGH POWER SWITCHING USE INSULATED TYPE

QM100CY-H 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PUFM-X9
Reach Compliance Code:unknown风险等级:5.81
Is Samacsys:N最大集电极电流 (IC):100 A
配置:COMPLEX最小直流电流增益 (hFE):75
最大降落时间(tf):3000 nsJESD-30 代码:R-PUFM-X9
元件数量:2端子数量:9
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN最大功率耗散 (Abs):620 W
认证状态:Not Qualified子类别:BIP General Purpose Power
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER晶体管元件材料:SILICON
VCEsat-Max:2 VBase Number Matches:1

QM100CY-H 数据手册

 浏览型号QM100CY-H的Datasheet PDF文件第2页浏览型号QM100CY-H的Datasheet PDF文件第3页浏览型号QM100CY-H的Datasheet PDF文件第4页浏览型号QM100CY-H的Datasheet PDF文件第5页 
MITSUBISHI TRANSISTOR MODULES  
QM100CY-H  
HIGH POWER SWITCHING USE  
INSULATED TYPE  
QM100CY-H  
IC  
Collector current ........................ 100A  
VCEX Collector-emitter voltage ........... 600V  
hFE DC current gain...............................75  
Insulated Type  
UL Recognized  
Yellow Card No. E80276 (N)  
File No. E80271  
APPLICATION  
UPS, CVCF  
OUTLINE DRAWING & CIRCUIT DIAGRAM  
Dimensions in mm  
95  
B2X  
6
80  
6
B
2
23  
23  
23.5  
φ5.5  
E
2
E2 E1  
C
1
C
2
B
2
B
2
X
X
C
2
E2E1  
C1  
E
2
E1  
B1  
B
1
E
B
1
B1X  
1
M5  
Tab#110, t=0.5  
LABEL  
Feb.1999  

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