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QM100TX1-HB PDF预览

QM100TX1-HB

更新时间: 2024-11-15 22:08:23
品牌 Logo 应用领域
三菱 - MITSUBISHI 晶体开关晶体管功率双极晶体管局域网高功率电源
页数 文件大小 规格书
5页 90K
描述
HIGH POWER SWITCHING USE INSULATED TYPE

QM100TX1-HB 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PUFM-X11
Reach Compliance Code:unknown风险等级:5.81
Is Samacsys:N最大集电极电流 (IC):100 A
配置:COMPLEX最小直流电流增益 (hFE):750
最大降落时间(tf):3000 nsJESD-30 代码:R-PUFM-X11
元件数量:6端子数量:11
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN认证状态:Not Qualified
子类别:BIP General Purpose Power表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
晶体管元件材料:SILICONVCEsat-Max:2.5 V
Base Number Matches:1

QM100TX1-HB 数据手册

 浏览型号QM100TX1-HB的Datasheet PDF文件第2页浏览型号QM100TX1-HB的Datasheet PDF文件第3页浏览型号QM100TX1-HB的Datasheet PDF文件第4页浏览型号QM100TX1-HB的Datasheet PDF文件第5页 
MITSUBISHI TRANSISTOR MODULES  
QM100TX1-HB  
HIGH POWER SWITCHING USE  
INSULATED TYPE  
QM100TX1-HB  
IC  
Collector current ........................ 100A  
VCEX Collector-emitter voltage ........... 600V  
hFE DC current gain.............................750  
Insulated Type  
UL Recognized  
Yellow Card No. E80276 (N)  
File No. E80271  
APPLICATION  
Inverters, Servo drives, UPS, DC motor controllers, NC equipment, Welders  
OUTLINE DRAWING & CIRCUIT DIAGRAM  
Dimensions in mm  
68  
8
(10) 18.5  
18.5  
18.5  
18.5 (10)  
4–φ5.4 0.1  
10  
11–M4  
80 0.25  
94  
P (+)  
B1  
B2  
B3  
B5  
B6  
U
V
W
LABEL  
B4  
N (–)  
13  
13  
Feb.1999  

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