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QM100DY-HK PDF预览

QM100DY-HK

更新时间: 2024-11-15 22:44:11
品牌 Logo 应用领域
三菱 - MITSUBISHI 晶体开关晶体管功率双极晶体管局域网高功率电源
页数 文件大小 规格书
5页 99K
描述
HIGH POWER SWITCHING USE INSULATED TYPE

QM100DY-HK 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PUFM-X9
Reach Compliance Code:unknown风险等级:5.81
Is Samacsys:N最大集电极电流 (IC):100 A
配置:COMPLEX最小直流电流增益 (hFE):75
最大降落时间(tf):3000 nsJESD-30 代码:R-PUFM-X9
元件数量:2端子数量:9
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN最大功率耗散 (Abs):620 W
认证状态:Not Qualified子类别:BIP General Purpose Power
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER晶体管元件材料:SILICON
VCEsat-Max:2 VBase Number Matches:1

QM100DY-HK 数据手册

 浏览型号QM100DY-HK的Datasheet PDF文件第2页浏览型号QM100DY-HK的Datasheet PDF文件第3页浏览型号QM100DY-HK的Datasheet PDF文件第4页浏览型号QM100DY-HK的Datasheet PDF文件第5页 
MITSUBISHI TRANSISTOR MODULES  
QM100DY-HK  
HIGH POWER SWITCHING USE  
INSULATED TYPE  
QM100DY-HK  
IC  
Collector current ........................ 100A  
VCEX Collector-emitter voltage ........... 600V  
hFE DC current gain...............................75  
Insulated Type  
UL Recognized  
Yellow Card No. E80276 (N)  
File No. E80271  
APPLICATION  
Inverters, Servo drives, DC motor controllers, NC equipment, Welders  
OUTLINE DRAWING & CIRCUIT DIAGRAM  
Dimensions in mm  
94  
1.3  
23  
23  
17.5  
4–φ5.5  
18.8  
E2  
C1  
C2E1  
80 0.25  
9.5 20.5  
B2X  
(12)  
(12)  
(12)  
Tab#110, t=0.5  
3–M5  
B2  
E2  
LABEL  
C2E1  
B1X  
E2  
C1  
E1  
B1  
Feb.1999  

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