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QM100HC-M PDF预览

QM100HC-M

更新时间: 2024-11-15 22:07:31
品牌 Logo 应用领域
三菱 - MITSUBISHI 晶体开关晶体管功率双极晶体管局域网高功率电源
页数 文件大小 规格书
5页 72K
描述
HIGH POWER SWITCHING USE NON-INSULATED TYPE

QM100HC-M 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PUFM-X2
Reach Compliance Code:unknown风险等级:5.81
Is Samacsys:N其他特性:BUILT IN BIAS RESISTOR
最大集电极电流 (IC):100 A配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE):100最大降落时间(tf):3000 ns
JESD-30 代码:R-PUFM-X2元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
最大功率耗散 (Abs):420 W认证状态:Not Qualified
子类别:BIP General Purpose Power表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
晶体管元件材料:SILICONVCEsat-Max:2 V
Base Number Matches:1

QM100HC-M 数据手册

 浏览型号QM100HC-M的Datasheet PDF文件第2页浏览型号QM100HC-M的Datasheet PDF文件第3页浏览型号QM100HC-M的Datasheet PDF文件第4页浏览型号QM100HC-M的Datasheet PDF文件第5页 
MITSUBISHI TRANSISTOR MODULES  
QM100HC-M  
HIGH POWER SWITCHING USE  
NON-INSULATED TYPE  
QM100HC-M  
IC  
Collector current ........................ 100A  
VCEX Collector-emitter voltage ........... 350V  
hFE DC current gain.............................100  
Non-Insulated Type  
APPLICATION  
Robotics, Forklifts, Welders  
OUTLINE DRAWING & CIRCUIT DIAGRAM  
Dimensions in mm  
53.5  
43.3  
33  
8
8
C
E
B
B
E
R6  
φ5.3  
10.5  
M5  
LABEL  
Feb.1999  

QM100HC-M 替代型号

型号 品牌 替代类型 描述 数据表
ET188 FUJI

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