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QIC0212003 PDF预览

QIC0212003

更新时间: 2024-11-09 17:42:59
品牌 Logo 应用领域
POWEREX 局域网功率控制晶体管
页数 文件大小 规格书
2页 51K
描述
Insulated Gate Bipolar Transistor, 120A I(C), 250V V(BR)CES, N-Channel, MODULE-7

QIC0212003 数据手册

 浏览型号QIC0212003的Datasheet PDF文件第2页 
Preliminary  
QIC0212003  
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697-1800 (724) 925-7272  
www.pwrx.com  
Dual IGBT Common Emitter Module  
120 Amp/250 Volts  
Description:  
Powerex Dual IGBT Module  
designed specially for customer  
applications. Each Module  
consists of one IGBT transistors in  
a common emitter configuration.  
The modules are isolated for easy  
mounting with other components  
on a common heat sink.  
QIC0212003  
Dual IGBT Module  
Common Emitter  
120 Amperes / 250 Volts  
Features:  
ƒ Low Drive Power  
ƒ Low Vce(sat)  
ƒ One(1) Trench Gate 120A 250V  
IGBT chip per switch  
ƒ Isolated Mounting  
ƒ Substrate – DBC AlN  
ƒ Copper Baseplate  
ƒ 2500V Isolating Mounting  
Dimensions  
Inches  
3.62  
Millimeters  
92  
A
B
C
D
E
F
3.15  
80  
1.40  
35.6  
21  
0.83  
1.18  
30  
0.79  
20  
G
H
J
0.93  
23.7  
17.2  
5.8  
0.68  
0.23  
K
L
0.61  
15.6  
16.2  
16.5  
10  
0.64  
M
N
P
Q
R
S
T
0.65  
0.40  
0.25  
6.2  
0.256 DIA.  
0.15  
6.5 DIA.  
3.8  
M5  
M5  
0.79  
20  
U
0.25  
6.3  
Page 1 of 3  
09/19/2006  

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