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QID3320002 PDF预览

QID3320002

更新时间: 2024-11-26 12:34:51
品牌 Logo 应用领域
POWEREX 双极性晶体管
页数 文件大小 规格书
6页 740K
描述
Dual IGBT HVIGBT Module 200 Amperes/3300 Volts

QID3320002 数据手册

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QID3320002  
Dual IGBT  
Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272  
www.pwrx.com  
HVIGBT Module  
200 Amperes/3300 Volts  
A
S NUTS  
(3TYP)  
D
F
C
F
J (2TYP)  
N
H
M
B E  
1
2
3
H
V (4TYP)  
G (3TYP)  
R (DEEP)  
T (SCREWING  
DEPTH)  
K
L
Description:  
U (5TYP)  
(3TYP)  
(2TYP)  
Powerex IGBT Modules are  
P
designed for use in switching  
applications. Each module consists  
of two IGBT Transistors in a  
Q
half-bridge configuration with each  
transistor having a reverse-  
connected super-fast recovery  
free-wheel diode. All components  
and interconnects are isolated  
from the heat sinking baseplate,  
offering simplified system assembly  
and thermal management.  
1
2
3
4
5
6
8
7
Features:  
Advanced Mitsubishi R-Series  
Chip Technology  
Low V  
Outline Drawing and Circuit Diagram  
CE(sat)  
Creepage and Clearance  
meet IEC 60077-1  
High Isolation Voltage  
Rugged SWSOA and RRSOA  
Compact Industry Standard  
Dimensions  
Inches  
5.51  
Millimeters  
140.0  
73.0  
Dimensions  
Inches  
Millimeters  
17.5 0.25  
9.75  
A
B
C
D
E
F
L
M
N
P
Q
R
S
T
0.69 0.01  
0.38  
2.87  
1.89  
48.0  
0.20  
5.0  
4.88 0.01  
2.24 0.01  
1.18  
124.0 0.25  
57.0 0.25  
30.0  
0.22  
5.5  
Package  
1.44  
36.5  
0.16  
4.0  
Applications:  
G
H
J
0.43  
11.0  
M6 Metric  
0.63 Min.  
M6  
Medium Voltage Drives  
High Voltage Power Supplies  
1.07  
27.15  
16.0 Min.  
2.8 x 0.5  
7.0 Dia.  
0.20  
5.0  
U
V
0.11 x 0.02  
0.28 Dia.  
K
1.65  
42.0  
01/13 Rev. 8  
1

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