Datasheet > QID1210002

QID1210002

更新时间： 2024-11-26 19:58:31

品牌	Logo	应用领域
POWEREX		局域网栅功率控制晶体管
页数	文件大小	规格书
4页	566K
描述
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-7

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

QID1210002 数据手册

QID1210002

Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272

Dual IGBTMOD™

NFH-Series Module

Custom 100 Amperes/1200 Volts

MEASUREMENT POINT

C2E1

P - NUTS (3 TYP)

Q - (2 TYP)

Description:

Powerex IGBTMOD™ Modules

are designed for use in high

frequency applications; 30 kHz

for hard switching applications

and 60 to 70 kHz for soft switching

applications. Each module

consists of two IGBT Transistors

in a half-bridge configuration with

each transistor having a reverse-

connected super-fast recovery

free-wheel diode. All components

and interconnects are isolated from

the heat sinking baseplate, offering

simplified system assembly and

thermal management.

T U

LABEL

C2E1

Features:

£ Low E

SW(off)

£ Discrete Super-Fast Recovery

Free-Wheel Diode

Outline Drawing and Circuit Diagram

£ Isolated Baseplate for Easy

Heat Sinking

Dimensions

Inches

3.70

1.89

Millimeters

94.0

Dimensions

Inches

M5 Metric

0.ꢀ6 Dia.

0.0ꢀ

Millimeters

48.0

Dia. 6.5

4.0

Applications:

1.18+0.04/-0.01 30.0+1.0/-0.5

£ Power Supplies

£ Induction Heating

£ Welders

3.15 0.01

0.43

80.0 0.ꢀ5

11.0

0.94

ꢀ4.0

7.5

0.3

0.16

4.0

0.33

8.5

0.71

18.0

13.0

13.5

ꢀ3.0

ꢀ1.ꢀ

0.63

16.0

ꢀ.5

0.51

0.1

0.53

0.98

ꢀ5.0

1ꢀ.0

ꢀ.8

0.91

0.47

0.83

0.11

0.67

17.0

0.ꢀ8

7.0

11/09 Rev. 2

12 3 4

中文翻译

下载PDF

与QID1210002相关器件

型号	品牌	获取价格	描述	数据表
QID1210005	POWEREX	获取价格	Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts
QID1210006	POWEREX	获取价格	Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts
QID1210006_14	POWEREX	获取价格	Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts
QID1210007	POWEREX	获取价格	Insulated Gate Bipolar Transistor
QID1215003	POWEREX	获取价格	Insulated Gate Bipolar Transistor
QID1230015	POWEREX	获取价格	Dual IGBTMOD NX-Series Module 300 Amperes/1200 Volts
QID3310001	POWEREX	获取价格	Insulated Gate Bipolar Transistor, 100A I(C), 3300V V(BR)CES, N-Channel, MODULE-9
QID3310002	POWEREX	获取价格	Insulated Gate Bipolar Transistor, 100A I(C), 3300V V(BR)CES, N-Channel, MODULE-9
QID3310006	POWEREX	获取价格	Insulated Gate Bipolar Transistor
QID3320002	POWEREX	获取价格	Dual IGBT HVIGBT Module 200 Amperes/3300 Volts