Datasheet > QID3310006

QID3310006

更新时间： 2024-11-26 20:10:15

品牌	Logo	应用领域
POWEREX		栅
页数	文件大小	规格书
6页	565K
描述
Insulated Gate Bipolar Transistor

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QID3310006 数据手册

QID3310006 Preliminary

Dual IGBT

Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272

www.pwrx.com

HVIGBT Module

100 Amperes/3300 Volts

S NUTS

(3TYP)

J (2TYP)

B E

V (4TYP)

G (3TYP)

R (DEEP)

U (5TYP)

Description:

(3TYP)

(2TYP)

Powerex HVIGBTs feature highly

insulating housings that offer

enhanced protection by means of

greater creepage and strike clear-

ance distance for many demanding

applications like medium voltage

drives and auxiliary traction

applications.

(SCREWING

DEPTH - 3 TYP)

Features:

 -40 to 150°C Extended

Temperature Range

 100% Dynamic Tested

 100% Partial Discharge Tested

 Advanced Mitsubishi R-Series

Chip Technology

Outline Drawing and Circuit Diagram

 Aluminum Nitride (AlN) Ceramic

Substrate for Low Thermal

Impedance

 Complementary Line-up in

Expanding Current Ranges to

Mitsubishi HVIGBT Power

Modules

 Copper Baseplate

 Creepage and Clearance Meet

IEC 60077-1

 Rugged SWSOA and RRSOA

Dimensions

Inches

5.51

Millimeters

140.0

73.0

Dimensions

Inches

Millimeters

17.5 0.25

9.75

0.69 0.01

0.38

2.87

1.50

38.0

0.20

5.0

4.88 0.01

2.24 0.01

1.18

124.0 0.25

57.0 0.25

30.0

0.22

5.5

1.04

26.5

0.16

4.0

0.43

11.0

M5 Metric

0.63 Min.

0.11 x 0.02

0.28 Dia.

1.07

27.15

16.0 Min.

2.8 x 0.5

7.0 Dia.

0.20

5.0

1.65

42.0

Applications:

 High Voltage Power Supplies

 Medium Voltage Drives

 Motor Drives

 Traction

Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.

The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.

11/14 Rev. 1

12 3 4 5 6

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