5秒后页面跳转
QID1210006 PDF预览

QID1210006

更新时间: 2024-11-26 12:19:23
品牌 Logo 应用领域
POWEREX 双极性晶体管
页数 文件大小 规格书
7页 905K
描述
Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts

QID1210006 数据手册

 浏览型号QID1210006的Datasheet PDF文件第2页浏览型号QID1210006的Datasheet PDF文件第3页浏览型号QID1210006的Datasheet PDF文件第4页浏览型号QID1210006的Datasheet PDF文件第5页浏览型号QID1210006的Datasheet PDF文件第6页浏览型号QID1210006的Datasheet PDF文件第7页 
QID1210006  
Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272  
www.pwrx.com  
Split Dual Si/SiC  
Hybrid IGBT Module  
100 Amperes/1200 Volts  
Y
A
F
AA  
D
AC  
AB  
Z
DETAIL "B"  
Q
Q
Q
P
U
Description:  
1
2
3
4
5
6
7
8
9
10 11 12  
Powerex IGBT Modules are  
designed for use in high frequency  
applications; upwards of 30 kHz  
for hard switching applications  
and 80 kHz for soft switching  
applications. Each module consists  
of two IGBT Transistors with each  
transistor having a reverse-  
connected super-fast recovery  
free-wheel silicon carbide Schottky  
diode. All components and inter-  
connects are isolated from the  
heat sinking baseplate, offering  
simplified system assembly and  
thermal management.  
E2  
C2  
E1  
C1  
X
B
M
N
E
G
DETAIL "B"  
G2 S2  
20 19 18 17  
G1 S1  
16 15 14 13  
L
T
S
R
W
DETAIL "A"  
V
H
K
C
T
DETAIL "A"  
Features:  
£ Low E  
C1 (10 - 12)  
C2 (4 - 6)  
SW(off)  
£ Aluminum Nitride Isolation  
G1 (15 - 16)  
E1 (13 - 14)  
E1 (7 - 9)  
G2 (19 - 20)  
E2 (17 - 18)  
E2 (1 - 3)  
£ Discrete Super-Fast  
Recovery Free-Wheel Silicon  
Carbide Schottky Diode  
£ Low Internal Inductance  
£ 2 Individual Switches  
per Module  
£ Isolated Baseplate for Easy  
Heat Sinking  
£ AlSiC Baseplate  
£ RoHS Compliant  
Outline Drawing and Circuit Diagram  
Dimensions  
Inches  
4.32  
Millimeters  
109.8  
56.1  
Dimensions  
Inches  
0.449  
0.885  
1.047  
Millimeters  
11.40  
22.49  
26.6  
A
B
C
D
E
F
Q
R
2.21  
0.71  
18.0  
S
3.70 0.02  
2.026  
3.17  
94.0 0.5  
51.46  
80.5  
T
0.15  
3.80  
U
0.16  
4.0  
Applications:  
£ Energy Saving Power  
Systems such as:  
Fans; Pumps; Consumer  
Appliances  
V
0.30  
7.5  
G
H
K
L
1.96  
49.8  
W
X
0.045  
0.03  
1.15  
1.00  
25.5  
0.8  
0.87  
22.0  
Y
0.16  
4.0  
£ High Frequency Type Power  
Systems such as:  
0.266  
0.26  
6.75  
Z
0.47  
12.1  
UPS; High Speed Motor Drives;  
Induction Heating; Welder;  
Robotics  
M
N
P
6.5  
AA  
AB  
AC  
0.17 Dia.  
0.10 Dia.  
0.08 Dia.  
4.3 Dia.  
2.5 Dia.  
2.1 Dia.  
0.59  
15.0  
0.586  
14.89  
£ High Temperature Power  
Systems such as:  
Power Electronics in Electric  
Vehicle and Aviation Systems  
2/7/14 Rev. 3  
1

与QID1210006相关器件

型号 品牌 获取价格 描述 数据表
QID1210006_14 POWEREX

获取价格

Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts
QID1210007 POWEREX

获取价格

Insulated Gate Bipolar Transistor
QID1215003 POWEREX

获取价格

Insulated Gate Bipolar Transistor
QID1230015 POWEREX

获取价格

Dual IGBTMOD NX-Series Module 300 Amperes/1200 Volts
QID3310001 POWEREX

获取价格

Insulated Gate Bipolar Transistor, 100A I(C), 3300V V(BR)CES, N-Channel, MODULE-9
QID3310002 POWEREX

获取价格

Insulated Gate Bipolar Transistor, 100A I(C), 3300V V(BR)CES, N-Channel, MODULE-9
QID3310006 POWEREX

获取价格

Insulated Gate Bipolar Transistor
QID3320002 POWEREX

获取价格

Dual IGBT HVIGBT Module 200 Amperes/3300 Volts
QID4515001 POWEREX

获取价格

Dual IGBTMOD HVIGBT Module 150 Amperes/4500 Volts
QID4515002 POWEREX

获取价格

Dual IGBTMOD HVIGBT Module 150 Amperes/4500 Volts