是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | FLANGE MOUNT, R-PUFM-X8 |
针数: | 8 | Reach Compliance Code: | unknown |
风险等级: | 5.78 | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 450 A | 集电极-发射极最大电压: | 600 V |
配置: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | JESD-30 代码: | R-PUFM-X8 |
元件数量: | 2 | 端子数量: | 8 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
QID0660011 | POWEREX | Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel, PLASTIC PACKAGE-7 |
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QID0660023 | POWEREX | Dual IGBT Module 600 Amperes/600 Volts |
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QID1210002 | POWEREX | Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-7 |
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QID1210005 | POWEREX | Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts |
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QID1210006 | POWEREX | Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts |
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QID1210006_14 | POWEREX | Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts |
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