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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| QID0630006 | POWEREX |
获取价格 |
Dual IGBT H-Series Hermetic Module (300 Amperes/600 Volts) |
|
| QID0640020 | POWEREX |
获取价格 |
Dual IGBTMOD NX-Series Module 400 Amperes/600 Volts |
|
| QID0645011 | POWEREX |
获取价格 |
Insulated Gate Bipolar Transistor, 450A I(C), 600V V(BR)CES, N-Channel, PLASTIC PACKAGE-8 |
|
| QID0660011 | POWEREX |
获取价格 |
Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel, PLASTIC PACKAGE-7 |
|
| QID0660023 | POWEREX |
获取价格 |
Dual IGBT Module 600 Amperes/600 Volts |
|
| QID1210002 | POWEREX |
获取价格 |
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-7 |
|
| QID1210005 | POWEREX |
获取价格 |
Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts |
|
| QID1210006 | POWEREX |
获取价格 |
Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts |
|
| QID1210006_14 | POWEREX |
获取价格 |
Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts |
|
| QID1210007 | POWEREX |
获取价格 |
Insulated Gate Bipolar Transistor |
|
解析光耦仿真器：升级光耦合器技术的必要性
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台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
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