5秒后页面跳转
QID0640020 PDF预览

QID0640020

更新时间: 2024-11-26 12:49:47
品牌 Logo 应用领域
POWEREX 双极性晶体管
页数 文件大小 规格书
5页 642K
描述
Dual IGBTMOD NX-Series Module 400 Amperes/600 Volts

QID0640020 数据手册

 浏览型号QID0640020的Datasheet PDF文件第2页浏览型号QID0640020的Datasheet PDF文件第3页浏览型号QID0640020的Datasheet PDF文件第4页浏览型号QID0640020的Datasheet PDF文件第5页 
QID0640020  
Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272  
www.pwrx.com  
Dual IGBTMOD™  
NX-Series Module  
400 Amperes/600 Volts  
A
D
E
J
F
J
Y
(4 PLACES)  
AD  
AE  
AF  
G
H
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25  
Q
R
Q
47  
48  
24  
23  
S
S
T
U
U
AA  
AB  
B
Z
T
DETAIL "B"  
10 11 12 13 14 15 16 17 18 19 20 21 22  
AG  
1
2
3
4
5
6
7
8
9
Description:  
W
AJ  
AH  
N
P
K
X
AC (4 PLACES)  
AL  
V
K
L
Powerex IGBTMOD™ Modules  
are designed for use in switching  
applications. Each module  
L
M
DETAIL "A"  
AM  
C
consists of two IGBT Transistors  
in a half-bridge configuration with  
each transistor having a reverse-  
connected super-fast recovery  
free-wheel diode. All components  
and interconnects are isolated from  
the heat sinking baseplate, offering  
simplified system assembly and  
thermal management.  
AK  
AT  
AU  
E1C2(24) E1C2(23)  
AR  
AS  
AP  
AV  
C1(22)  
E1(16)  
G1(15)  
AW  
Tr2  
Di1  
Di2  
AN  
AQ  
Tr1  
G2(38)  
E2(39)  
AX  
DETAIL "A"  
Th  
NTC  
*ALL PIN DIMENSIONS WITHIN  
A TOLERANCE OF 0.5  
E2  
C1  
(47)  
(48)  
TH1  
(1)  
TH2  
(2)  
DETAIL "B"  
Features:  
£ AlSiC Baseplate  
£ Low Drive Power  
Outline Drawing and Circuit Diagram  
Dimensions  
Inches  
5.98  
2.44  
0.67  
5.39  
4.79  
4.33 0.02  
3.89  
3.72  
0.53  
0.15  
0.28  
0.30  
1.95  
Millimeters  
152.0  
62.0  
17.0  
137.0  
121.7  
110.0 0.5  
99.0  
94.5  
13.5  
3.8  
7.25  
7.75  
49.54  
22.86  
14.0  
22.0  
17.0  
Dimensions  
Z
Inches  
1.53  
1.97 0.02  
2.26  
Millimeters  
39.0  
50.0 0.5  
57.5  
£ Low V  
CE(sat)  
A
B
C
D
E
F
G
H
J
£ Discrete Super-Fast Recovery  
Free-Wheel Diode  
AA  
AB  
AC  
AD  
AE  
AF  
AG  
AH  
AJ  
£ Isolated Baseplate for Easy  
Heat Sinking  
0.22 Dia.  
0.67+0.04/-0.02 17.0+1.0/-0.5  
5.5 Dia.  
0.51  
0.27  
0.03  
0.81  
0.12  
0.14  
0.21  
0.49  
0.15  
13.0  
7.0  
0.8  
20.5  
3.0  
3.5  
5.4  
12.5  
3.81  
1.15  
0.65  
7.4  
6.2  
4.3 Dia.  
2.5 Dia.  
2.1 Dia.  
1.5  
Applications:  
£ AC Motor Control  
£ Motion/Servo Control  
£ Photovoltaic/Fuel Cell  
K
L
AK  
AL  
M
N
P
Q
R
S
T
AM  
AN  
AP  
AQ  
AR  
AS  
AT  
AU  
AV  
AW  
AX  
0.9  
0.55  
0.87  
0.67  
0.48  
0.24  
0.16  
0.37  
0.83  
M6  
0.05  
0.025  
0.29  
12.0  
0.24  
U
V
W
X
Y
6.0  
4.2  
6.5  
21.14  
M6  
0.17 Dia.  
0.10 Dia.  
0.08 Dia.  
0.06  
0.49  
12.5  
04/10 Rev. 0  
1

与QID0640020相关器件

型号 品牌 获取价格 描述 数据表
QID0645011 POWEREX

获取价格

Insulated Gate Bipolar Transistor, 450A I(C), 600V V(BR)CES, N-Channel, PLASTIC PACKAGE-8
QID0660011 POWEREX

获取价格

Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel, PLASTIC PACKAGE-7
QID0660023 POWEREX

获取价格

Dual IGBT Module 600 Amperes/600 Volts
QID1210002 POWEREX

获取价格

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-7
QID1210005 POWEREX

获取价格

Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts
QID1210006 POWEREX

获取价格

Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts
QID1210006_14 POWEREX

获取价格

Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts
QID1210007 POWEREX

获取价格

Insulated Gate Bipolar Transistor
QID1215003 POWEREX

获取价格

Insulated Gate Bipolar Transistor
QID1230015 POWEREX

获取价格

Dual IGBTMOD NX-Series Module 300 Amperes/1200 Volts