Datasheet > QIB0607002

QIB0607002

更新时间： 2024-11-26 20:00:43

品牌	Logo	应用领域
POWEREX		局域网电动机控制栅晶体管
页数	文件大小	规格书
4页	212K
描述
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel,

阅读下载

中文翻译

获取价格

如果您发现信息不准确，欢迎纠错

QIB0607002 数据手册

Preliminary

QIB0607002

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

H-BRIDGE

75 Amp/600 Volts

Description:

Powerex IGBT H-Bridge Module

is designed especially for customer

applications. Each module consists

of four IGBT Transistors in an

H-Bridge configuration, with each

transistor having a reverse-con-

nected super-fast recovery free-

wheel diode. All components and

interconnects are isolated from the

heat sinking baseplate, offering

simplified system assembly and

thermal management.

Features:

Low Drive Power

Low V_CE(sat)

Discrete Super-Fast Recovery

(100ns) Free-Wheel Diode

Isolated Baseplate for Easy

Heat Sinking

Applications:

AC Motor Control

Motion/Servo Control

UPS

Welding Power Supplies

Laser Power Supplies

Preliminary

Page 1

9/1/2006

12 3 4

中文翻译

下载PDF

型号	品牌	获取价格	描述	数据表
QIC0212003	POWEREX	获取价格	Insulated Gate Bipolar Transistor, 120A I(C), 250V V(BR)CES, N-Channel, MODULE-7
QIC0610001	POWEREX	获取价格	Dual Common Emitter IGBT Module 100A 600V Per Switch
QIC0620001	POWEREX	获取价格	Dual Common Emitter IGBT Module 200A 600V Per Switch
QIC0620003	POWEREX	获取价格	Dual IGBT Common Emitter Module (200 Amp/600 Volts)
QIC1208001	POWEREX	获取价格	Dual AC Switch IGBT Module 1200V 75A
QID0630001	ETC	获取价格	TRANSISTOR \| IGBT POWER MODULE \| HALF BRIDGE \| 600V V(BR)CES \| 300A I(C)
QID0630006	POWEREX	获取价格	Dual IGBT H-Series Hermetic Module (300 Amperes/600 Volts)
QID0640020	POWEREX	获取价格	Dual IGBTMOD NX-Series Module 400 Amperes/600 Volts
QID0645011	POWEREX	获取价格	Insulated Gate Bipolar Transistor, 450A I(C), 600V V(BR)CES, N-Channel, PLASTIC PACKAGE-8
QID0660011	POWEREX	获取价格	Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel, PLASTIC PACKAGE-7