Datasheet > PZTA96S/D

PZTA96S/D

更新时间： 2024-11-19 23:30:27

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
8页	55K
描述
High Voltage Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

PZTA96S/D 数据手册

PZTA96ST1

Preferred Device

High Voltage Transistor

PNP Silicon

MAXIMUM RATINGS

http://onsemi.com

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current

Symbol

Value

–450

–5.0

–500

1.5

Unit

Vdc

CEO

CBO

EBO

COLLECTOR 2,4

Vdc

BASE

mAdc

Watts

Total Power Dissipation Up to

T = 25°C (Note 1)

EMITTER 3

Storage Temperature Range

Junction Temperature

–65 to +150

150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

AWW

ZTA96

Thermal Resistance from Junction to

Ambient (Note 1)

83.3

°C

SOT–223, TO–261AA

CASE 318E

ELECTRICAL CHARACTERISTICS (Note 2)

= Location

STYLE 1

= Work Week

Characteristic

Symbol

Min Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

–450

–5.0

–

Vdc

(BR)CEO

(BR)CBO

(BR)EBO

ORDERING INFORMATION

(I = –1.0 mAdc, I = 0)

Device

PZTA96ST1

Package

Shipping

1000/Tape & Reel

Collector–Emitter Breakdown Voltage

(I = –100 mAdc, I = 0)

SOT–223

Emitter–Base Breakdown Voltage

(I = –10 mAdc, I = 0)

Preferred devices are recommended choices for future use

and best overall value.

Collector–Base Cutoff Current

(V = –400 Vdc, I = 0)

–0.1 mAdc

CBO

Emitter–Base Cutoff Current

(V = –4.0 Vdc, I = 0)

–

EBO

ON CHARACTERISTICS

DC Current Gain (Note 3)

150

–

(I = –10 mAdc, V = –10 Vdc)

Saturation Voltages

Vdc

(I = –20 mAdc, I = –2.0 mAdc)

–

–0.6

–1.0

CE(sat)

BE(sat)

(I = –20 mAdc, I = –2.0 mAdc)

1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.

x 0.059 in.; mounting pad for the collector lead min. 0.93 in .

2. T = 25°C unless otherwise noted.

3. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle = 2.0%.

Semiconductor Components Industries, LLC, 2002

Publication Order Number:

June, 2002 – Rev. 1

PZTA96ST1/D

12 3 4 5 6 7 8

中文翻译

下载PDF

与PZTA96S/D相关器件

型号	品牌	获取价格	描述	数据表
PZTA96ST1	ONSEMI	获取价格	High Voltage Transistor
PZTA96ST1G	ONSEMI	获取价格	High Voltage PNP Bipolar Transistor, SOT-223 (TO-261) 4 LEAD, 1000-REEL
PZTA96T1	MOTOROLA	获取价格	500mA, 450V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-261AA
PZTA96T1	ONSEMI	获取价格	500mA, 450V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-261AA, CASE 318E-04, 4 PIN
PZTA96T3	MOTOROLA	获取价格	500mA, 450V, PNP, Si, SMALL SIGNAL TRANSISTOR, CASE 318E-04, 4 PIN
PZTM1101	NXP	获取价格	NPN transistor/Schottky-diode module
PZTM1101/T3	NXP	获取价格	TRANSISTOR 0.2 A, 40 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power
PZTM1101T/R	NXP	获取价格	TRANSISTOR 0.2 A, 40 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power
PZTM1102	NXP	获取价格	PNP transistor/Schottky-diode module
PZTM1102,135	NXP	获取价格	TRANSISTOR 0.2 A, PNP, Si, POWER TRANSISTOR, PLASTIC PACKAGE-4, BIP General Purpose Power