是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PDSO-G4 | Reach Compliance Code: | unknown |
风险等级: | 5.91 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 0.5 A | 集电极-发射极最大电压: | 450 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 50 |
JEDEC-95代码: | TO-261AA | JESD-30 代码: | R-PDSO-G4 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 4 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 1.5 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 50 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PZTA96T3 | MOTOROLA |
获取价格 |
500mA, 450V, PNP, Si, SMALL SIGNAL TRANSISTOR, CASE 318E-04, 4 PIN | |
PZTM1101 | NXP |
获取价格 |
NPN transistor/Schottky-diode module | |
PZTM1101/T3 | NXP |
获取价格 |
TRANSISTOR 0.2 A, 40 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power | |
PZTM1101T/R | NXP |
获取价格 |
TRANSISTOR 0.2 A, 40 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power | |
PZTM1102 | NXP |
获取价格 |
PNP transistor/Schottky-diode module | |
PZTM1102,135 | NXP |
获取价格 |
TRANSISTOR 0.2 A, PNP, Si, POWER TRANSISTOR, PLASTIC PACKAGE-4, BIP General Purpose Power | |
PZTM1102/T3 | NXP |
获取价格 |
TRANSISTOR 0.2 A, PNP, Si, POWER TRANSISTOR, PLASTIC PACKAGE-4, BIP General Purpose Power | |
PZTM1102T/R | NXP |
获取价格 |
TRANSISTOR 0.2 A, PNP, Si, POWER TRANSISTOR, PLASTIC PACKAGE-4, BIP General Purpose Power | |
PZU10A | NXP |
获取价格 |
Single Zener diodes | |
PZU10ADG | NXP |
获取价格 |
Single Zener diodes |