Datasheet > PXN010-30QL

PXN010-30QL

更新时间： 2024-09-21 11:11:35

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
15页	320K
描述
30 V, N-channel Trench MOSFETProduction

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PXN010-30QL 数据手册

PXN010-30QL

30 V, N-channel Trench MOSFET

2 November 2020

Product data sheet

1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-

Mounted Device (SMD) plastic package using Trench MOSFET technology.

2. Features and benefits

•

Logic-level compatible

•

Trench MOSFET technology

Ultra low Q_Gand Q_GDfor high system efficiency, especially at higher switching frequencies

Superfast switching with soft-recovery

Low spiking and ringing for low EMI designs

MLPAK33 package (3.3 x 3.3 mm footprint)

3. Applications

•

DC to DC conversion

Battery management

Low-side load switch

Switching circuits

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

V_GS

-20

I_D

V_GS= 10 V; T_amb= 25 °C; t ≤ 5 s

[1]

16.5

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 10.3 A; T_j= 25 °C

V_GS= 4.5 V; I_D= 8.9 A; T_j= 25 °C

8.7

10.2

13.6

mΩ

10.8

Dynamic characteristics

Q_G(tot)total gate charge

V_DS= 15 V; I_D= 8.9 A; V_GS= 4.5 V;

T_j= 25 °C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm².

12 3 4 5 6 7...15

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