Datasheet > PXN014-100QE

PXN014-100QE

更新时间： 2024-03-03 10:10:47

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	354K
描述
100 V, N-channel Trench MOSFETProduction

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PXN014-100QE 数据手册

PXN014-100QE

100 V, N-channel Trench MOSFET

25 September 2023

Product data sheet

1. General description

NextPower 100 V, enhanced logic level gate drive MOSFET in an MLPAK33 (SOT8002) Surface-

Mounted Device (SMD) plastic package.

2. Features and benefits

•

Logic-level compatible

•

Low Q_rrfor higher efficiency and lower spiking

Low Q_G× R_DSonFOM for high efficiency switching applications

Strong avalanche energy rating (E_AS) and 100% tested

Ha-free and RoHS compliant MLPAK33 package

Thermally efficient package in a small form factor (3.3 mm x 3.3 mm footprint)

3. Applications

•

Synchronous rectifier in AC-DC and DC-DC

Primary side switch – 48 V DC-DC

BLDC motor control

USB-PD adapters

Full-bridge and half-bridge applications

Flyback and resonant topologies

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

V_GS

I_D

Parameter

Conditions

Min

Typ

Max

100

Unit

drain-source voltage

gate-source voltage

drain current

25 °C ≤ T_j≤ 150 °C

T_j= 25 °C

-20

V_GS= 10 V; T_mb= 25 °C

P_tot

total power dissipation T_mb= 25 °C

junction temperature

°C

T_j

-55

150

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 8.2 A; T_j= 25 °C

V_GS= 4.5 V; I_D= 7.2 A; T_j= 25 °C

11.8

14.4

mΩ

Dynamic characteristics

Q_GD

gate-drain charge

total gate charge

V_DS= 50 V; I_D= 8.2 A; V_GS= 10 V;

T_j= 25 °C

4.9

Q_G(tot)

12 3 4 5 6 7...14

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