PXN028-100QL
N-channel 100 V, 28 mOhm, logic level Trench MOSFET in
MLPAK33
21 September 2023
Product data sheet
1. General description
General purpose MOSFET for standard applications, 24 A, logic level N-channel enhancement
mode Power MOSFET in MLPAK33 package.
2. Features and benefits
•
Logic level compatibility
•
•
Trench MOSFET technology
Thermally efficient package in a small form factor (3.3 mm x 3.3 mm footprint)
3. Applications
•
•
•
•
•
•
Secondary side synchronous rectification
DC-to-DC converters
Home appliance
Motor drive
Load switching
LED lighting
4. Quick reference data
Table 1. Quick reference data
Symbol
VDS
ID
Parameter
Conditions
Min
Typ
Max
100
24
Unit
V
drain-source voltage
drain current
25 °C ≤ Tj ≤ 150 °C
VGS = 10 V; Tmb = 25 °C; Fig. 2
-
-
-
-
-
-
A
Ptot
total power dissipation Tmb = 25 °C; Fig. 1
junction temperature
-
30
W
Tj
-55
150
°C
Static characteristics
RDSon drain-source on-state
resistance
VGS = 10 V; ID = 5 A; Tj = 25 °C; Fig. 9
VGS = 4.5 V; ID = 5 A; Tj = 25 °C; Fig. 9
-
-
19.7
25.6
28
33
mΩ
mΩ
Dynamic characteristics
QGD
gate-drain charge
total gate charge
ID = 5 A; VDS = 50 V; VGS = 4.5 V;
Tj = 25 °C; Fig. 11; Fig. 12
-
-
3
7
-
-
nC
nC
QG(tot)
Avalanche ruggedness
EDS(AL)S non-repetitive drain-
ID = 4.9 A; Vsup ≤ 100 V; VGS = 10 V;
Tj(init) = 25 °C; unclamped
[1]
-
-
42
mJ
source avalanche
energy