Datasheet > PXN028-100QL

PXN028-100QL

更新时间： 2024-03-03 10:10:26

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	324K
描述
N-channel 100 V, 28 mOhm, logic level Trench MOSFET in MLPAK33Production

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PXN028-100QL 数据手册

Nexperia

PXN028-100QL

N-channel 100 V, 28 mOhm, logic level Trench MOSFET in MLPAK33

aaa-037055

aaa-035877

100

1.6

1.2

0.8

0.4

3.5 V

2.8 V

3 V

DSon

(mΩ)

4.5 V

= 10 V

(A)

-60 -30

90 120 150 180

T (°C)

T_j= 25 °C

Fig. 9. Drain-source on-state resistance as a function

of drain current; typical values

Fig. 10. Normalized drain-source on-state resistance

factor as a function of junction temperature

aaa-037056

(V)

80 V

GS(pl)

50 V

= 20 V

GS(th)

GS2

GS1

(nC)

G(tot)

003aaa508

T_j= 25 °C; I_D= 5 A

Fig. 11. Gate-source voltage as a function of gate

charge; typical values

Fig. 12. Gate charge waveform definitions

PXN028-100QL

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Product data sheet

21 September 2023

7 / 12

1...4 5 678 9 10...12

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