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PXN020-100QS PDF预览

PXN020-100QS

更新时间: 2024-09-21 17:01:19
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
11页 329K
描述
N-channel 100 V, 20 mOhm, standard level Trench MOSFET in MLPAK33Production

PXN020-100QS 数据手册

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PXN020-100QS  
N-channel 100 V, 20 mOhm, standard level Trench MOSFET in  
MLPAK33  
28 September 2023  
Product data sheet  
1. General description  
General purpose MOSFET for standard applications, 31 A, standard level N-channel enhancement  
mode Power MOSFET in MLPAK33 package.  
2. Features and benefits  
Standard level compatibility  
Trench MOSFET technology  
Thermally efficient package in a small form factor (3.3 mm x 3.3 mm footprint)  
3. Applications  
Secondary side synchronous rectification  
DC-to-DC converters  
Home appliance  
Motor drive  
Load switching  
LED lighting  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
VDS  
ID  
Parameter  
Conditions  
Min  
Typ  
Max  
100  
31  
Unit  
V
drain-source voltage  
drain current  
25 °C ≤ Tj ≤ 150 °C  
VGS = 10 V; Tmb = 25 °C; Fig. 2  
-
-
-
-
-
-
A
Ptot  
total power dissipation Tmb = 25 °C; Fig. 1  
junction temperature  
-
37  
W
Tj  
-55  
150  
°C  
Static characteristics  
RDSon drain-source on-state  
resistance  
Dynamic characteristics  
VGS = 10 V; ID = 5 A; Tj = 25 °C; Fig. 9  
-
17.4  
20  
mΩ  
QGD  
gate-drain charge  
total gate charge  
ID = 5 A; VDS = 50 V; VGS = 10 V;  
Tj = 25 °C; Fig. 11; Fig. 12  
-
-
3.5  
13  
-
-
nC  
nC  
QG(tot)  
Avalanche ruggedness  
EDS(AL)S non-repetitive drain-  
ID = 15.6 A; Vsup ≤ 100 V; VGS = 10 V; [1]  
Tj(init) = 25 °C; unclamped  
-
-
24.3  
mJ  
source avalanche  
energy  
 
 
 
 

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