Datasheet > PXN014-100QE

PXN014-100QE

更新时间： 2024-03-03 10:10:47

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	354K
描述
100 V, N-channel Trench MOSFETProduction

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PXN014-100QE 数据手册

Nexperia

PXN014-100QE

100 V, N-channel Trench MOSFET

aaa-037383

= 10 µs

(A)

Limit R

= V /I

DSon

100 µs

1 ms

DC; T = 25 °C

10 ms

-1

100 ms

-2

-3

-4

DC; T

amb

drain mounting pad 6 cm

= 25 °C;

-1

(V)

Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-

source voltage

PXN014-100QE

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Product data sheet

25 September 2023

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