Datasheet > PXN011-100QS

PXN011-100QS

更新时间： 2024-03-03 10:10:10

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
11页	328K
描述
N-channel 100 V, 11 mOhm, standard level Trench MOSFET in MLPAK33Production

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PXN011-100QS 数据手册

PXN011-100QS

N-channel 100 V, 11 mOhm, standard level Trench MOSFET in

MLPAK33

21 September 2023

Product data sheet

1. General description

General purpose MOSFET for standard applications, 56 A, standard level N-channel enhancement

mode Power MOSFET in MLPAK33 package.

2. Features and benefits

•

Standard level compatibility

•

Trench MOSFET technology

Thermally efficient package in a small form factor (3.3 mm x 3.3 mm footprint)

3. Applications

•

Secondary side synchronous rectification

DC-to-DC converters

Home appliance

Motor drive

Load switching

LED lighting

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

I_D

Parameter

Conditions

Min

Typ

Max

100

Unit

drain-source voltage

drain current

25 °C ≤ T_j≤ 150 °C

V_GS= 10 V; T_mb= 25 °C; Fig. 2

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

junction temperature

T_j

-55

150

°C

Static characteristics

R_DSondrain-source on-state

resistance

Dynamic characteristics

V_GS= 10 V; I_D= 10 A; T_j= 25 °C; Fig. 9

9.3

mΩ

Q_GD

gate-drain charge

total gate charge

I_D= 10 A; V_DS= 50 V; V_GS= 10 V;

T_j= 25 °C; Fig. 11; Fig. 12

5.7

Q_G(tot)

Avalanche ruggedness

E_DS(AL)Snon-repetitive drain-

I_D= 23.6 A; V_sup≤ 100 V; V_GS= 10 V; [1]

T_j(init)= 25 °C; unclamped

62.4

source avalanche

energy

12 3 4 5 6 7...11

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