Datasheet > PTVA047002EV

PTVA047002EV

更新时间： 2024-11-30 01:25:55

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
8页	449K
描述
Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 470 â 806 MHz

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PTVA047002EV 数据手册

PTVA047002EV

Thermally-Enhanced High Power RF LDMOS FET

700 W, 50 V, 470 – 806 MHz

Description

The PTVA047002EV LDMOS FET is designed for use in power ampliﬁer

applications in the 470 MHz to 806 MHz frequency band. Features

include high gain and thermally-enhanced package with bolt-down ﬂange.

Manufactured with Wolfspeed's advanced LDMOS process, this device

provides excellent thermal performance and superior reliability.

PTVA047002EV

Package H-36275-4

DVB-T Performance

Drain Efficiency, Gain vs Frequency

V_DD= 50 V, I_DQ= 1.2 A, P_OUT= 135 W avg

Features

•ꢀ Input matched

•ꢀ Integrated ESD protection

•ꢀ Low thermal resistance

•ꢀ High gain

Drain Efficiency

•ꢀ Thermally enhanced package

•ꢀ RoHS compliant

•ꢀ Capable of withstanding a 10:1 VSWR at

130 W average power under DVB-T signal

condition

•ꢀ Human Body Model Class 2 (per ANSI/ESDA/

Gain

JEDEC JS-001)

ptva047002ev_g5

450 500 550 600 650 700 750 800 850

Frequency (MHz)

RF Characteristics

DVB-T (8K OFDM, 64QAM) Characteristics (tested in Wolfspeed test ﬁxture, narrowband 806 MHz)

= 50 V, I = 1200 mA, ƒ = 806 MHz, input PAR = 10.5 dB (unclipped), output PAR = 7.8 dB @ 0.01% CCDF probability

Characteristic

Average Output Power

Gain

Symbol

Min

—

Typ

130

Max

—

Unit

OUT

16.5

17.5

—

Drain Efficiency

—

Adjacent Channel Power Ratio

ACPR

—

–29.5

–25

dBc

(ACPR integrated over 200 KHz BW at + 4.3 MHz offset from center frequency)

Rev. 05, 2018-08-20

4600 Silicon Drive

Durham, NC 27703

www.wolfspeed.com

12 3 4 5 6 7 8

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